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Contents

README

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LTC4413EDD#TRPBF

Analog Devices · Power Distribution Switches · DFN-10-EP(3x3)

LTC4413EDD#TRPBF from Analog Devices, in a DFN-10-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 INA power_in Primary ideal diode anode and positive power supply; bypass with a ceramic capacitor of at least 1µF, limit slew rate to less than 0.5V/µs, and it may be grounded when not used.
2 ENBA input Active-high enable for diode A that shuts down its power path when pulled high, is tied to GND to enable, and has a weak 3µA pull-down so it may be left floating.
3 GND power_in Power and signal ground for the IC.
4 ENBB input Active-high enable for diode B that shuts down its power path when pulled high, is tied to GND to enable, and has a weak 3µA pull-down so it may be left floating.
5 INB power_in Secondary ideal diode anode and positive power supply; bypass with a ceramic capacitor of at least 1µF, limit slew rate to less than 0.5V/µs, and it may be grounded when not used.
6 OUTB power_out Secondary ideal diode cathode and output; bypass with a high (1mΩ min) ESR ceramic capacitor of at least 4.7µF, limit slew rate to less than 0.5V/µs, and leave floating when not in use.
7 NC unconnected No internal connection.
8 NC unconnected No internal connection.
9 STAT output Status indicator with a weak 9µA pull-down current output that is high when terminated and indicates diode conduction; may be left floating or grounded.
10 OUTA power_out Primary ideal diode cathode and output; bypass with a high (1mΩ min) ESR ceramic capacitor of at least 4.7µF, limit slew rate to less than 0.5V/µs, and leave floating when not in use.
11 GND power_in Exposed pad is GND and must be soldered to PCB ground for both electrical contact to ground and good thermal contact.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package DFN-10-EP(3x3)
Category Power Management (PMIC)
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Supply Range for Channel A or B VIN, VOUT 2.5 5.5 V VIN and/or VOUT Must Be in This Range for Proper Operation 2
UVLO Turn-On Rising Threshold Max UVLO 2.4 V (VINA, VINB, VOUTA, VOUTB) 2
UVLO Turn-Off Falling Threshold Max UVLO 1.7 V (VINA, VINB, VOUTA, VOUTB) 2
Quiescent Current in Forward Regulation IQF 25 40 µA VINA = 3.6V, IOUTA = -100mA, VINB = 0V, IOUTB = 0mA 2
Quiescent Current While in Reverse Turn-Off, Current Drawn from VIN IQRIN -1 0.5 2 µA VIN = 3.6V, VOUT = 5.5V (Note 6) 2
Quiescent Current While in Reverse Turn-Off, Measured Via GND IQRGND 22 30 µA VINA = VINB = VOUTB = 0V, VOUTA = 5.5V, VSTAT = 0V 2
Quiescent Current While in Reverse Turn-Off, Current Drawn from VOUTA When OUTA Supplies Chip Power IQROUTA 17 31 µA VINA = VINB = VOUTB = 0V, VOUTA = 5.5V 2
Quiescent Current While in Reverse Turn-Off, Current Drawn from VOUTA When OUTB Supplies Chip Power IQROUTB 2 3 µA VINA = VINB = 0V, VOUTA < VOUTB = 5.5V 2
Quiescent Current with Both ENBA and ENBB High IQOFF 20 31 µA VINA = VINB = 3.6V, VENBA and VENBB High, VSTAT = 0V 2
VINA or VINB Current When VOUTA or VOUTB Supplies Power ILEAK -1 1 µA VIN = 0V, VOUT = 5.5V 3
Reverse Turn-Off Voltage (VOUT, VIN) VRTO -5 10 mV VIN = 3.6V 3
Forward Voltage Drop (VIN, VOUT) at IOUT = -1mA VFWD 28 38 mV VIN = 3.6V 3
On-Resistance, RFWD Regulation (Measured as ∆V/∆I) RFWD 100 140 mΩ VIN = 3.6V, IOUT = -100mA to -500mA (Note 5) 3
On-Resistance, RON Regulation (Measured as V/I at IIN = 1A) RON 140 200 mΩ VIN = 3.6V, IOUT = -1.0A (Note 5) 3
Quiescent Current While in Overcurrent Operation IQOC 150 300 µA VINX = 3.6V, IOUT = 1.9A (Notes 4, 5) 3
STAT Off Current Shutdown ISOFF -1 0 1 µA Shutdown 3
STAT Sink Current ISON 7 9 17 µA VIN > VOUT, VENBA < VENBIL, VENBB < VENBIL, IOUT < IMAX 3
ENBA, ENBB Inputs Rising Threshold Voltage VENBIH 540 600 mV VENBA, VENBB Rising 3
ENBA, ENBB Inputs Falling Threshold Voltage VENBIL 400 460 mV VENBA, VENBB Falling 3
ENBA, ENBB Inputs Pull-Down Current IENB 1.5 3 4.5 µA VOUT < VIN = 3.6V, VENBA > VENBIL, VENBB > VENBIL 3
INA, INB, OUTA, OUTB, STAT, ENBA, ENBB Voltage -0.3 6 V 2
Operating Temperature Range -40 85 °C 2
Storage Temperature Range -65 125 °C 2
Junction Temperature TJMAX 125 °C Note 4 2
Thermal Resistance, Junction to Ambient θJA 40 °C/W 4-layer PCB 2

CAD (KiCad official)

  • Symbol: LTC4413EDD#TRPBF
  • Footprint: Package_DFN_QFN:DFN-10-1EP_3x3mm_P0.5mm_EP1.55x2.48mm
  • 3D model: DFN-10-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: ltc4413edd-trpbf-etched.step / ltc4413edd-trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ltc4413edd-trpbf.step / ltc4413edd-trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (14 pp, sha256 5cae088218f6f678, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF