component
MMBT5551DW
Public Made by Adomby adom
Shikues Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT5551DW
Shikues · Bipolar (BJT) · SOT-363
MMBT5551DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (NPN); VEBO rating 6 V, V(BR)EBO min 6 V at IE=10uA. |
| 2 | B1 | passive | Base of transistor 1; base-emitter saturation voltage 0.7 V typ and 1 V max at IC=10mA, IB=1mA. |
| 3 | C2 | passive | Collector of transistor 2; VCEO 160 V, VCBO 180 V, continuous IC 600 mA. |
| 4 | E2 | passive | Emitter of transistor 2 (NPN); VEBO rating 6 V. |
| 5 | B2 | passive | Base of transistor 2; base-emitter saturation voltage 0.7 V typ and 1 V max at IC=10mA, IB=1mA. |
| 6 | C1 | passive | Collector of transistor 1; VCEO 160 V, VCBO 180 V, continuous IC 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 180 | V | IC=100uA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 160 | V | IC=1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10uA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | uA | VCB=120V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=6V, IC=0 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.15 | V | IC=10mA, IB=1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=50mA, IB=5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=10mA, IB=1mA | 1 | ||
| Collector output capacitance | Cob | 6 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Thermal resistance junction to ambient | RθJA | 625 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MMBT5551DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmbt5551dw-etched.step/mmbt5551dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt5551dw.step/mmbt5551dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (3 pp, sha256
d17f96e50f4df4a0, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).