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CES2321-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownCES2321-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
CES2321-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±12 V (VGS). |
| 2 | S | passive | Source terminal of the MOSFET; the continuous source-drain diode current is rated at -2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at -20 V and the continuous drain current at -4 A (TC = 25 °C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | TA = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C, unless otherwise noted | 1 | |
| Continuous Drain Current | ID | -4 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -3.2 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | Tb, A = 25 °C (note c) | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | Tb, A = 70 °C (note c) | 1 | ||
| Pulsed Drain Current | IDM | -10 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -1 | A | Tb, A = 25 °C (note c) | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | Tb, A = 25 °C (note c) | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | Tb, A = 70 °C (note c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 75 | 100 | °C/W | t = 5 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 166 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 40 | 50 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -20 | V | VDS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -1.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -10 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.06 | Ω | VGS = -10 V, ID = -3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.065 | Ω | VGS = -4.5 V, ID = -2.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.08 | Ω | VGS = -2.5 V, ID = -2 A | 2 | ||
| Gate Resistance | Rg | 0.9 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 22 | 33 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 20 | 30 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 28 | 42 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -2.1 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -10 | A | Pulse (note a) | 2 | ||
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = -3.1 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 23 | 35 | ns | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 12 | 20 | nC | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
CES2321-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
ces2321-vb-etched.step/ces2321-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ces2321-vb.step/ces2321-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
589ec826dee09505, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).