component

TPM2101BC3

Public Made by Adom

by adom

TECH PUBLIC MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

markdown

TPM2101BC3

TECH PUBLIC · MOSFETs · SOT-323

TPM2101BC3 from TECH PUBLIC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for a gate-source voltage VGS of ±10 V per the absolute maximum ratings.
2 S passive Source of the P-channel MOSFET; the body diode has a maximum continuous current IS of -2.0 A.
3 D passive Drain of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V and a drain current ID of -2.0 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 1
Gate-source voltage VGS -10 10 V 1
Drain current, steady state ID -2 A TA=25℃ @ Steady State 1
Drain current, steady state ID -1.6 A TA=70℃ @ Steady State 1
Pulsed drain current IDM -8 A 1
Total power dissipation PD 0.45 W TA=25℃ 1
Junction and storage temperature range TJ ,TSTG -55 150 ℃ 1
Thermal resistance, junction-to-ambient RθJA 278 ℃/W 1
Drain-source breakdown voltage BVDSS -20 V VGS= 0V, ID=-250μA 2
Zero gate voltage drain current IDSS -1 μA VDS=-20V,VGS=0V,TC=25℃ 2
Gate-body leakage current IGSS -100 100 nA VGS= ±10V, VDS=0V 2
Gate threshold voltage VGS(th) -0.4 -0.62 -1 V VDS= VGS, ID=-250μA 2
Static drain-source on-resistance RDS(ON) 100 130 mΩ VGS= -4.5V, ID=-1.5A 2
Static drain-source on-resistance RDS(ON) 130 170 mΩ VGS= -2.5V, ID=-1.2A 2
Static drain-source on-resistance RDS(ON) 165 250 mΩ VGS= -1.8V, ID=-1.0A 2
Diode forward voltage VSD -0.8 -1.2 V IS=-2.0A,VGS=0V 2
Maximum body-diode continuous current IS -2 A 2
Input capacitance Ciss 290 pF VDS=-10V,VGS=0V,f=1MHZ 2
Output capacitance Coss 47 pF 2
Reverse transfer capacitance Crss 29 pF 2
Total gate charge Qg 3.9 nC VGS=-4.5V,VDS=-10V,ID=-1.0A 2
Gate-source charge Qgs 0.7 nC 2
Gate-drain charge Qgd 0.9 nC 2
Turn-on delay time tD(on) 12 ns VGS=-4.5V,VDD=-10V, ID=-1A, RGEN=2.5Ω 2
Turn-on rise time tr 54 ns 2
Turn-off delay time tD(off) 15 ns 2
Turn-off fall time tf 9 ns 2

CAD (KiCad official)

  • Symbol: TPM2101BC3
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: tpm2101bc3-etched.step / tpm2101bc3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpm2101bc3.step / tpm2101bc3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (3 pp, sha256 4647fb13385b5547, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF