component
CSD17318Q2
Public Made by Adomby adom
Texas Instruments Pre-ordered Chips, WSON-6(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD17318Q2
Texas Instruments · Pre-ordered Chips · WSON-6(2x2)
CSD17318Q2 from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal, connected internally to the drain thermal pad and to the other drain pins (2, 5, 6); the device is rated for VDS of 30 V. |
| 2 | D | passive | Drain terminal, connected internally to the drain thermal pad and to the other drain pins (1, 5, 6); the device is rated for VDS of 30 V. |
| 3 | G | input | Gate terminal, optimized for 5 V gate drive with an absolute maximum VGS of ±10 V. |
| 4 | S | passive | Source terminal, connected internally to the source thermal pad; the continuous drain current is rated at 10 A (RθJA-limited) and 21.5 A (package limited). |
| 5 | D | passive | Drain terminal, connected internally to the drain thermal pad and to the other drain pins (1, 2, 6); the device is rated for VDS of 30 V. |
| 6 | D | passive | Drain terminal, connected internally to the drain thermal pad and to the other drain pins (1, 2, 5); the device is rated for VDS of 30 V. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6(2x2) |
| Category | Interface ICs |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 30 | V | TA = 25°C | 1 | ||
| Gate-to-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous Drain Current (Package Limited) | ID | 21.5 | A | Package Limited | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 25 | A | Silicon Limited, TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 10 | A | 1 | |||
| Pulsed Drain Current | IDM | 68 | A | TA = 25°C | 1 | ||
| Power Dissipation | PD | 2.5 | W | 1 | |||
| Power Dissipation | PD | 16 | W | TC = 25°C | 1 | ||
| Operating Junction, Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Avalanche Energy, Single Pulse | EAS | 7.7 | mJ | ID = 12.4A, L = 0.1mH, RG = 25Ω | 1 | ||
| Gate-to-source threshold voltage | VGS(th) | 0.6 | 0.9 | 1.2 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-source on-resistance | RDS(on) | 20 | 30 | mΩ | VGS = 2.5V, ID = 8A | 3 | |
| Drain-to-source on-resistance | RDS(on) | 13.9 | 16.9 | mΩ | VGS = 4.5V, ID = 8A | 3 | |
| Drain-to-source on-resistance | RDS(on) | 12.6 | 15.1 | mΩ | VGS = 8V, ID = 8A | 3 | |
| Series gate resistance | RG | 1 | 2 | Ω | 3 | ||
| Input capacitance | Ciss | 676 | 879 | pF | VGS = 0V, VDS = 15V, ƒ = 1MHz | 3 | |
| Output capacitance | Coss | 71 | 92 | pF | 3 | ||
| Reverse transfer capacitance | Crss | 39 | 51 | pF | 3 | ||
| Diode forward voltage | VSD | 0.8 | 1 | V | ISD = 8A, VGS = 0V | 3 | |
| Drain-to-source leakage | IDSS | 1 | μA | VGS = 0V, VDS = 24V | 3 | ||
| Drain-to-source voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 3 | ||
| Gate-to-source leakage | IGSS | 100 | nA | VDS = 0V, VGS = 10V | 3 | ||
| Transconductance | gfs | 42 | S | VDS = 3V, ID = 8A | 3 | ||
| Gate charge total (4.5 V) | Qg | 6 | nC | VDS = 15V, ID = 8A | 3 | ||
| Gate charge gate-to-drain | Qgd | 1.3 | nC | VDS = 15V, ID = 8A | 3 | ||
| Gate charge gate-to-source | Qgs | 1.5 | nC | VDS = 15V, ID = 8A | 3 | ||
| Gate charge at Vth | Qg(th) | 0.7 | nC | VDS = 15V, ID = 8A | 3 | ||
| Output charge | Qoss | 2.7 | nC | VDS = 15V, VGS = 0V | 3 | ||
| Turnon delay time | td(on) | 5 | ns | VDS = 15V, VGS = 4.5V, ID = 8A, RG = 2Ω | 3 | ||
| Rise time | tr | 16 | ns | 3 | |||
| Turnoff delay time | td(off) | 13 | ns | 3 | |||
| Fall time | tf | 4 | ns | 3 | |||
| Reverse recovery charge | Qrr | 2.9 | nC | VDD= 15V, IF = 8A, di/dt = 300A/μs | 3 | ||
| Reverse recovery time | trr | 12 | ns | 3 | |||
| Thermal resistance junction-to-case | RθJC | 7.9 | °C/W | 3 | |||
| Thermal resistance junction-to-ambient | RθJA | 65 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
CSD17318Q2 - Footprint:
Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: WSON-6(2x2) (KiCad packages3D, STEP)
- 3D model files:
csd17318q2-etched.step/csd17318q2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd17318q2.step/csd17318q2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (15 pp, sha256
463e47ea8aeac640, retrieved 2026-11-06, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).