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README

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BQ296113DSGR

Texas Instruments · Battery Management · WSON-8-EP(2x2)

BQ296113DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Power supply input; the datasheet gives a recommended VDD range of 3 V to 20 V and an absolute maximum of 30 V with respect to VSS.
2 V4 input Sense input for the positive voltage of the fourth cell from the bottom of the stack.
3 V3 input Sense input for the positive voltage of the third cell from the bottom of the stack.
4 V2 input Sense input for the positive voltage of the second cell from the bottom of the stack.
5 V1 input Sense input for the positive voltage of the lowest cell from the bottom of the stack, with cell input range 0 V to 5 V per the recommended conditions.
6 VSS power_in Electrically connected to integrated circuit ground and the negative terminal of the lowest cell in the stack.
7 REG output Regulated supply output that requires an external ceramic capacitor for stability; absolute maximum REG to VSS is 3.6 V.
8 OUT output Analog output drive for an overvoltage fault signal, CMOS output high or open-drain active low; absolute maximum OUT to VSS is 30 V.
9 PWPD power_in Exposed pad; TI recommends connecting it to VSS on the PCB.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-8-EP(2x2)
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage, VDD VDD 3 20 V 5
Supply voltage, VDD with REG output on VDD 4 V REG output on 5
Input voltage range Vn - Vn-1, V1 - VSS 0 5 V Vn - Vn-1, V1 - VSS 5
Operating ambient temperature range TA -40 110 °C 5
Supply voltage absolute maximum VDD - VSS -0.3 30 V 5
Input voltage absolute maximum V4 - V3, V3 - V2, V2 - V1, V1 - VSS -0.3 30 V 5
REG input voltage absolute maximum REG - VSS -0.3 3.6 V 5
Output voltage absolute maximum OUT - VSS -0.3 30 V 5
Lead temperature TSOLDER 300 °C soldering, 10 s 5
Storage temperature Tstg -65 150 °C 5
Overvoltage detection hysteresis VHYS 250 300 400 mV 6
OV detection accuracy VOA -10 10 mV TA = 25°C 6
OV detection accuracy across temperature VOADRIFT -40 40 mV TA = -40°C 6
OV detection accuracy across temperature VOADRIFT -20 20 mV TA = 0°C 6
OV detection accuracy across temperature VOADRIFT -24 24 mV TA = 60°C 6
OV detection accuracy across temperature VOADRIFT -54 54 mV TA = 110°C 6
Supply current with REG on IDD 4 6 µA (Vn - Vn-1) = 2V to 4.15V, n = 1 to 4, VDD = top Vn voltage, (V1 - VSS) > VUVREG, IREG = 0mA, TA = 0°C to 60°C 6
Supply current with REG on IDD 8 µA (Vn - Vn-1) = 2V to 4.15V, n = 1 to 4, VDD = top Vn voltage, (V1 - VSS) > VUVREG, IREG = 0mA, TA = -40°C to 110°C 6
Supply current with REG off IDD 1 2 µA (Vn - Vn-1) = 2V to 4.15V, n = 1 to 4, VDD = top Vn voltage, (V1 - VSS) < VUVREG, TA = 0°C to 60°C 6
Supply current with REG off IDD 4 µA (Vn - Vn-1) = 2V to 4.15V, n = 1 to 4, VDD = top Vn voltage, (V1 - VSS) < VUVREG, TA = -40°C to 110°C 6
Input current at Vx pins IIN -0.1 0.1 µA (Vn - Vn-1) = (V1 - VSS) = 3.8V, VDD = top Vn voltage, TA = 25°C 6
Output drive voltage, active high VOUT 6 7 8 V (Vn - Vn-1) or (V1 - VSS) > VOV, IOH = 100µA, VDD = top Vn voltage 6
Output low voltage (no OV) VOL 250 400 mV (Vn - Vn-1) and (V1 - VSS) < VOV, VDD = sum of the cell stack voltage, IOL = 100µA measured into OUT pin 6
OUT source current (during OV) IOUTH 4.5 mA (Vn - Vn-1), (V3 - V2), or (V1 - VSS) > VOV, VDD = top Vn voltage, forced OUT = 0V, measured out of OUT pin 6
OUT sink current (no OV) IOUTL 0.5 14 mA (Vn - Vn-1) and (V1 - VSS) < VOV, VDD = top Vn voltage, forced OUT = VDD, measured into OUT pin, pull-up RPU = 5kΩ to VDD 6
OV delay time, 3-s delay option tDELAY 2.4 3 3.6 s Internal fixed delay, 3-s delay option 6
OV delay timer count reset time tDELAY_RESET 0.6 ms Internal fixed delay; tDELAY resets when the cell voltage falls below VOV for tDELAY_RESET 6
REG supply at 500µA load, 3.3V VREG 3.234 3.3 3.366 V VDD ≥ 4V, IREG = 500µA, CREG = 0.47µF, VREG = 3.3V 7
REG supply from 0 to 2mA load, 3.3V VREG 3.2 3.3 3.4 V VDD ≥ 4V, IREG = 0µA to 2mA, CREG = 0.47µF, VREG = 3.3V 7
REG current output IREG 0 2 mA VDD ≥ 4V, CREG = 0.47µF 7
REG pull-down resistor RREG_PD 20 30 45 kΩ REG is disabled 7
Undervoltage detection accuracy VUVREG -50 50 mV Factory configuration: 2.0V to 3.5V in 50mV steps, TA = 25°C 7
Undervoltage detection hysteresis VUVHYS 250 300 400 mV 7
Undervoltage detection delay tUVDELAY 4.5 6 7.5 s 7
Junction-to-ambient thermal resistance RθJA 62 °C/W DSG (WSON) 8 pins 5
Junction-to-case (top) thermal resistance RθJC(top) 72 °C/W DSG (WSON) 8 pins 5
Junction-to-board thermal resistance RθJB 32.5 °C/W DSG (WSON) 8 pins 5
Junction-to-top characterization parameter ψJT 1.6 °C/W DSG (WSON) 8 pins 5
Junction-to-board characterization parameter ψJB 33 °C/W DSG (WSON) 8 pins 5
Junction-to-case (bottom) thermal resistance RθJC(bot) 10 °C/W DSG (WSON) 8 pins 5

CAD (KiCad official)

  • Symbol: BQ296113DSGR
  • Footprint: Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm
  • 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: bq296113dsgr-etched.step / bq296113dsgr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq296113dsgr.step / bq296113dsgr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (33 pp, sha256 63e2aa2b5e24079f, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF