component
HACPDQC5V0-HF
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHACPDQC5V0-HF
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HACPDQC5V0-HF from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode protecting one I/O line, with reverse working voltage of 5.0 V and minimum breakdown of 5.6 V at 1 mA. |
| 2 | 2 | passive | Other terminal of the bi-directional ESD protection diode, connected to the protected line or to ground, with IEC 61000-4-2 protection of ±30 kV contact and air discharge. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Lead temperature for soldering (10 s) | TL | 260 | °C | Maximum lead temperature for soldering during 10 s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Peak pulse power | PPP | 105 | μ | tp = 8/20 μs | 1 | ||
| IEC 61000-4-2 ESD air discharge | -30 | 30 | KV | Air discharge, IEC 61000-4-2 | 1 | ||
| IEC 61000-4-2 ESD contact discharge | -30 | 30 | KV | Contact discharge, IEC 61000-4-2 | 1 | ||
| IEC 61000-4-4 EFT current | 40 | A | IEC 61000-4-4, 5/50 ns | 1 | |||
| Reverse breakdown voltage | VBR | 5.6 | V | IT = 1 mA | 2 | ||
| Reverse working voltage | VRWM | 5 | V | 2 | |||
| Reverse leakage current | IR | 0.3 | μA | VRWM = 5.0 V | 2 | ||
| Clamping voltage | VC | 8 | V | IPP = 1 A, tp = 8/20 μs | 2 | ||
| Clamping voltage | VC | 15 | V | IPP = 8 A, tp = 8/20 μs | 2 | ||
| Junction capacitance | CJ | 12 | pF | VR = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
HACPDQC5V0-HF - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hacpdqc5v0-hf-etched.step/hacpdqc5v0-hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hacpdqc5v0-hf.step/hacpdqc5v0-hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
eb64996e2e233ee5, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).