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TS61089BX

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Shenzhen JingYang ESD And Surge Protection (TVS/ESD), SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

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TS61089BX

Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · SOP-8

TS61089BX from Shenzhen JingYang, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K1 passive Tip line protected pin (cathode of thyristor 1); negative surges are suppressed by the thyristor and positive surges clamped by a diode to ground (A).
2 G input Gate pin referenced to -VBAT that sets the negative firing voltage, with low gate trigger current IGT of 5 mA max.
3 NC unconnected No connection.
4 K2 passive Ring line protected pin (cathode of thyristor 2); negative surges are suppressed by the thyristor and positive surges clamped by a diode to ground (A).
5 K2 passive Ring line protected pin, internally common with pin 4 (K2).
6 A power_in Anode / ground reference for the protector, internally common with pin 7.
7 A power_in Anode / ground reference for the protector, internally common with pin 6.
8 K1 passive Tip line protected pin, internally common with pin 1 (K1).

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOP-8
Category Circuit Protection
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage (TS61089BX) VDRM -170 V VGK=0 2
Repetitive peak gate-cathode voltage (TS61089BX) VGKRM -170 V VKA=0 2
Non-repetitive peak on-state current IPPSM 30 A 10/1000 us (Telcordia GR-1089-CORE, Section 4) 2
Non-repetitive peak on-state current IPPSM 40 A 5/320 us (ITU-T K.20, K.21 and K.45, K.44 open-circuit voltage 10/700 us) 2
Non-repetitive peak on-state current IPPSM 100 A 1.2/50 us (Telcordia GR-1089-CORE, Section 4) 2
Non-repetitive peak on-state current IPPSM 120 A 2/10 us (Telcordia GR-1089-CORE, Section 4) 2
Non-repetitive peak on-state current, 50 Hz to 60 Hz ITSM 11 A VGG=-75V, 50Hz to 60Hz, 0.1 s 2
Non-repetitive peak on-state current, 50 Hz to 60 Hz ITSM 4.8 A VGG=-75V, 50Hz to 60Hz, 1 s 2
Non-repetitive peak on-state current, 50 Hz to 60 Hz ITSM 2.7 A VGG=-75V, 50Hz to 60Hz, 5 s 2
Non-repetitive peak on-state current, 50 Hz to 60 Hz ITSM 0.95 A VGG=-75V, 50Hz to 60Hz, 300 s 2
Non-repetitive peak on-state current, 50 Hz to 60 Hz ITSM 0.93 A VGG=-75V, 50Hz to 60Hz, 900 s 2
Lead soldering temperature (10 s) TL 260 ℃ 10 sec 2
Operating temperature range TJ -40 85 ℃ 2
Storage temperature range TSTG -55 150 ℃ 2
Junction to ambient thermal resistance RθJA 170 ℃/W 2
Off-state current ID -5 μA VD=VDRM, VGK=0, TJ=25 ℃ 3
Off-state current ID -50 μA VD=VDRM, VGK=0, TJ=85 ℃ 3
Breakover voltage V(BO) -57 V 2/10us, IPP=-56A, RS=45Ω, VGG=-48V, CG=220nF 3
Breakover voltage V(BO) -60 V 2/10us, IPP=-100A, RS=50Ω, VGG=-48V, CG=220nF 3
Breakover voltage V(BO) -64 V 1.2/50us, IPP=-96A, RS=52Ω, VGG=-48V, CG=220nF 3
Forward voltage VF 3 V IF = 5 A, TW = 200 us 3
Peak forward recovery voltage VFRM 6 V 2/10us, IPP=-56A, RS=45Ω, VGG=-48V, CG=220nF 3
Peak forward recovery voltage VFRM 8 V 2/10us, IPP=-100A, RS=50Ω, VGG=-48V, CG=220nF 3
Peak forward recovery voltage VFRM 12 V 1.2/50us, IPP=-96A, RS=52Ω, VGG=-48V, CG=220nF 3
Holding current IH -150 mA IT = -1 A, di/dt = 1A/ms, VGG =-48 V 3
Gate reverse current IGKS -5 μA VGG = VGK = VGKRM, VKA = 0, TJ=25 ℃ 3
Gate reverse current IGKS -50 μA VGG = VGK = VGKRM, VKA = 0, TJ=85 ℃ 3
Gate trigger current IGT 5 mA IT = -3 A, tp(g) ≥ 20 us, VGG = -48V 3
Gate-cathode trigger voltage VGT 2.5 V IT = -3 A, tp(g) ≥ 20 us, VGG = -48V 3
Gate switching charge QGS 0.1 uC 1.2/50us, IPP=-53A, RS=47Ω, VGG=-48V, CG=220nF 3
Cathode-anode off-state capacitance CKA 100 pF F=1 MHz, Vd=1V, IG=0, VD=-3 V 3
Cathode-anode off-state capacitance CKA 50 pF F=1 MHz, Vd=1V, IG=0, VD=-48 V 3
Gate-cathode impulse breakover voltage VGK(BO) 9 V 2/10us, IPP=-56A, RS=45Ω, VGG=-48V, CG=220nF 3
Gate-cathode impulse breakover voltage VGK(BO) 12 V 2/10us, IPP=-100A, RS=50Ω, VGG=-48V, CG=220nF 3
Gate-cathode impulse breakover voltage VGK(BO) 16 V 1.2/50us, IPP=-96A, RS=52Ω, VGG=-48V, CG=220nF 3

CAD (KiCad official)

  • Symbol: TS61089BX
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ts61089bx-etched.step / ts61089bx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ts61089bx.step / ts61089bx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (5 pp, sha256 37dbf90c8eeb31bb, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF