component
ME45P04
Public Made by Adomby adom
MATSUKI MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownME45P04
MATSUKI · MOSFETs · TO-252-2(DPAK)
ME45P04 from MATSUKI, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.5 to -3 V. |
| 2 | D | passive | Drain (center position and exposed tab) of the P-channel MOSFET; VDS max -40 V, continuous ID -30 A at TC=25℃, pulsed IDM -120 A. |
| 3 | S | passive | Source of the P-channel MOSFET; carries the drain current, with ID of -30 A at TC=25℃ and body diode forward voltage of -1.2 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -30 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -23 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -120 | A | 1 | |||
| Maximum Power Dissipation | PD | 25 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 16 | W | TC=70℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.5 | -3 | V | VDS=VGS, ID=-250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V, VGS=0V | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 15 | 18 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18 | 25 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Diode Forward Voltage | VSD | -0.78 | -1.2 | V | IS=-1.7A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
ME45P04 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
me45p04-etched.step/me45p04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me45p04.step/me45p04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
b5ade182b63320d6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).