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TL081IDR-HXY

Public Made by Adom

by adom

HXY MOSFET FET Input Amplifiers, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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TL081IDR-HXY

HXY MOSFET · FET Input Amplifiers · SOP-8

TL081IDR-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OFFSET N1 passive Offset null input 1 of the single op amp, used to trim input offset voltage (typ ±3 mV, max ±5 mV at VCC=±15 V).
2 IN− input Inverting input; input voltage rated ±15 V and differential input voltage ±30 V maximum.
3 IN+ input Non-inverting input; input voltage rated ±15 V, common-mode range from (VCC-)+1.5 V to (VCC+)-0.5 V.
4 VCC- power_in Negative supply voltage; supply rated up to ±18 V maximum.
5 OFFSET N2 passive Offset null input 2 of the single op amp, used together with OFFSET N1 to trim input offset voltage.
6 OUT output Op amp output with short-circuit protection; maximum peak swing ±12 V min (±13.5 V typ) into RL = 10 kΩ.
7 VCC+ power_in Positive supply voltage; supply rated up to ±18 V maximum, static supply current ±1.8 mA typ (±2.8 mA max) at ±15 V.
8 NC unconnected No internal connection.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Offset Voltage ViO -5 3 5 mV Vo=0V 2
Input Offset Current IiO -100 100 pA Vo=0V 2
Input Bias Current Iib -200 200 nA Vo=0V 2
Maximum Peak Output Voltage Swing VOM -12 13.5 12 V RL = 10 kΩ 2
Large-signal differential voltage amplification AVD 80 95 dB RL ≥ 2 kΩ, Vo = ±10 V 2
Common Mode Rejection Ratio CMRR 70 85 dB Rs=50Ω 2
Supply Voltage Rejection Ratio SVR 80 86 dB VCC = ±15 V to ±9 V, Vo=0V 2
Static Supply Current ICC 1.8 2.8 mA VCC = ±15 V 2
Slew Rate SR 8 20 V/us VI = 10 V 2
Supply Voltage VCC -18 18 V 2
Input Voltage Vi -15 15 V 2
Differential Input Voltage Vid -30 30 V 2
Power Dissipation Ptot 680 mW 2
Operating Temperature Range Toper -20 85 ℃ 2
Storage Temperature Range Tstg -65 150 ℃ 2
Gain Bandwidth GB 3 MHz 2
Rise time tR 0.1 us Vin=20mV 2

CAD (KiCad official)

  • Symbol: TL081IDR-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tl081idr-hxy-etched.step / tl081idr-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tl081idr-hxy.step / tl081idr-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 e6e05b5cf2e627ea, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF