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Contents

README

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IXTP16N50P

IXYS · MOSFETs · TO-220-3

IXTP16N50P from IXYS, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; VGS continuous is limited to ±30 V and VGS(th) is 3.0 to 5.5 V.
2 Drain passive Drain terminal; VDSS is 500 V and ID25 is 16 A at TC = 25°C.
3 Source passive Source terminal, the reference for gate drive; the source-drain diode continuous current IS is 16 A at VGS = 0 V.

Key specifications

Parameter Value
Manufacturer IXYS
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 500 V TJ = 25°C to 150°C 1
Drain-gate voltage VDGR 500 V TJ = 25°C to 150°C; RGS = 1 MΩ 1
Continuous gate-source voltage VGS -30 30 V Continuous 1
Transient gate-source voltage VGSM -40 40 V Transient 1
Continuous drain current ID25 16 A TC = 25°C 1
Pulsed drain current IDM 48 A TC = 25°C, pulse width limited by TJM 1
Avalanche current IAR 16 A TC = 25°C 1
Avalanche energy, repetitive EAR 25 mJ TC = 25°C 1
Avalanche energy, single pulse EAS 750 mJ TC = 25°C 1
Peak diode recovery dv/dt dv/dt 10 V/ns IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 1
Total power dissipation PD 300 W TC = 25°C 1
Operating junction temperature TJ -55 150 °C 1
Maximum junction temperature TJM 150 °C 1
Storage temperature Tstg -55 150 °C 1
Lead temperature TL 300 °C 1.6 mm (0.062 in.) from case for 10 s 1
Plastic body soldering temperature TSOLD 260 °C Plastic body for 10 s 1
Drain-source breakdown voltage BVDSS 500 V VGS = 0 V, ID = 250 μA 1
Gate threshold voltage VGS(th) 3 5.5 V VDS = VGS, ID = 250 μA 1
Gate-source leakage current IGSS -10 10 nA VGS = ±30 VDC, VDS = 0 1
Zero gate voltage drain current IDSS 5 μA VDS = VDSS, VGS = 0 V 1
Zero gate voltage drain current at high temperature IDSS 100 μA VDS = VDSS, VGS = 0 V, TJ = 125°C 1
Static drain-source on resistance RDS(on) 400 mΩ VGS = 10 V, ID = 0.5 ID25; pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1
Forward transconductance gfs 9 16 S VDS = 20 V; ID = 0.5 ID25, pulse test 2
Junction-to-case thermal resistance RthJC 0.42 °C/W 2
Case-to-sink thermal resistance (TO-220) RthCS 0.25 °C/W TO-220 2
Continuous source current IS 16 A VGS = 0 V 2
Repetitive pulsed source current ISM 48 A Repetitive 2
Diode forward voltage VSD 1.5 V IF = IS, VGS = 0 V; pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 2
Reverse recovery time trr 400 ns IF = 16 A, -di/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: IXTP16N50P
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ixtp16n50p-etched.step / ixtp16n50p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixtp16n50p.step / ixtp16n50p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: IXYS datasheet (4 pp, sha256 fe5757df2d520716, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF