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Contents

README

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HGD032N04A

CRMICRO · MOSFETs · TO-252

HGD032N04A from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rated ±18 V, with threshold VGS(TH) of 1.0 V min to 2.5 V max at ID = 250µA.
2 D passive Drain; VDSS 40 V, continuous drain current 145 A silicon limited and 60 A package limited at TC = 25 °C, pulsed 240 A.
3 S passive Source; continuous body-diode source current 60 A at TC = 25 °C, pulsed 240 A.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage VDSS 40 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS =40V, VGS= 0V, Tj = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =32V, VGS= 0V, Tj = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=18V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-18V 2
Drain-to-Source On-Resistance RDS(ON) 2.5 3.2 mΩ VGS=10V,ID=30A 2
Drain-to-Source On-Resistance RDS(ON) 3.3 4.1 mΩ VGS=4.5V,ID=25A 2
Gate Threshold Voltage VGS(TH) 1 2.5 V VDS = VGS, ID = 250µA 2
Continuous Source Current (Body Diode) IS 60 A TC = 25 °C 3
Maximum Pulsed Current (Body Diode) ISM 240 A 3
Diode Forward Voltage VSD 1.2 V IS=30A,VGS=0V 3
Drain-to-Source Voltage VDSS 40 V 1
Continuous Drain Current ID 145 A TC = 25 °C 1
Continuous Drain Current (Package Limited) ID 60 A TC = 25 °C, package limited 1
Continuous Drain Current ID 60 A TC = 100 °C 1
Pulsed Drain Current IDM 240 A TC = 25 °C, repetitive rating; pulse width limited by maximum junction temperature 1
Gate-to-Source Voltage VGS -18 18 V 1
Avalanche Energy EAS 336 mJ L=0.5mH,VDD=20V,Ias=36.7A Start TJ=25℃ 1
Power Dissipation PD 96 W TC = 25 °C 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 1.25 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W 3

CAD (KiCad official)

  • Symbol: HGD032N04A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hgd032n04a-etched.step / hgd032n04a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hgd032n04a.step / hgd032n04a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 3ea16b0b4f76e4d8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF