component

PBSS4320T

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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PBSS4320T

Nexperia · Bipolar (BJT) · SOT-23

PBSS4320T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal; the datasheet limits the base current IB to 0.5 A maximum (absolute maximum ratings, open-collector/open-emitter conditions as listed).
2 E passive Emitter terminal; the emitter-base voltage VEBO is limited to 5 V maximum with the collector open.
3 C passive Collector terminal; the datasheet limits the collector-base voltage VCBO to 20 V, the collector-emitter voltage VCEO to 20 V, and the collector current IC to 2 A.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 20 V open emitter 2
collector-emitter voltage VCEO 20 V open base 2
emitter-base voltage VEBO 5 V open collector 2
collector current IC 2 A 2
repetitive peak collector current ICRM 3 A δ ≤ 0.25; tp ≤ 100 ms 2
peak collector current ICM 5 A single pulse; tp ≤ 1 ms 2
base current IB 0.5 A 2
total power dissipation Ptot 300 mW Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint 2
total power dissipation Ptot 480 mW Tamb ≤ 25 °C; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm² 2
total power dissipation Ptot 540 mW Tamb ≤ 25 °C; [3] ceramic PCB, Al2O3, standard footprint 2
total power dissipation Ptot 1.2 W Tamb ≤ 25 °C; [1][4] FR4 PCB, standard footprint; pulsed tp ≤ 100 ms; δ ≤ 0.25 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 417 K/W in free air; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint 3
thermal resistance from junction to ambient Rth(j-a) 260 K/W in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm² 3
thermal resistance from junction to ambient Rth(j-a) 230 K/W in free air; [3] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm² 3
thermal resistance from junction to ambient Rth(j-a) 104 K/W in free air; [4] pulsed, pulse width tp ≤ 100 ms; δ ≤ 0.25 3
collector-base cut-off current ICBO 100 nA VCB = 20 V; IE = 0 A; Tamb = 25 °C 3
collector-base cut-off current ICBO 50 µA VCB = 20 V; IE = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 220 VCE = 2 V; IC = 100 mA; Tamb = 25 °C 3
DC current gain hFE 200 VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
DC current gain hFE 150 VCE = 2 V; IC = 3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 70 mV IC = 500 mA; IB = 50 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 120 mV IC = 1 A; IB = 50 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 230 mV IC = 2 A; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 210 mV IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 310 mV IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation resistance RCEsat 80 105 mΩ IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter saturation voltage VBEsat 1.1 V IC = 2 A; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter saturation voltage VBEsat 1.2 V IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter turn-on voltage VBEon 1.2 V VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
transition frequency fT 100 MHz VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C 4
collector capacitance Cc 35 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: PBSS4320T
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pbss4320t-etched.step / pbss4320t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss4320t.step / pbss4320t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (10 pp, sha256 ebb2c94837eb13ed, retrieved 2026-10-14, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF