component
RD3T100CNTL1
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRD3T100CNTL1
ROHM Semicon · MOSFETs · TO-252
RD3T100CNTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 3.25 to 5.25 V at VDS = 10 V, ID = 1 mA. |
| 2 | Drain | passive | Drain terminal (also the exposed tab); drain-source voltage is rated at 200 V and continuous drain current at ±10 A at Tc = 25°C. |
| 3 | Source | passive | Source terminal, connected to the body diode anode; continuous forward body-diode current is 10 A at Tc = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 200 | V | 1 | |||
| Continuous drain current, Tc = 25°C | ID | -10 | 10 | A | Tc = 25°C; printed as ±10, limited only by maximum temperature allowed | 1 | |
| Continuous drain current, Tc = 100°C | ID | -5.4 | 5.4 | A | Tc = 100°C; printed as ±5.4 | 1 | |
| Pulsed drain current | IDP | -40 | 40 | A | Pw ≤ 10μs, Duty cycle ≤ 1%; printed as ±40 | 1 | |
| Gate - Source voltage | VGSS | -30 | 30 | V | 1 | ||
| Avalanche energy, single pulse | EAS | 7.35 | mJ | L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C | 1 | ||
| Avalanche current, single pulse | IAS | 5 | A | L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C | 1 | ||
| Power dissipation | PD | 85 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - case | RthJC | 1.46 | ℃/W | 2 | |||
| Soldering temperature, wavesoldering | Tsold | 265 | ℃ | wavesoldering for 10s | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 200 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | μA | VDS = 200V, VGS = 0V, Tj = 25°C | 2 | ||
| Gate - Source leakage current | IGSS | -100 | 100 | nA | VGS = ±30V, VDS = 0V; printed as ±100 | 2 | |
| Gate threshold voltage | VGS(th) | 3.25 | 5.25 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 140 | 182 | mΩ | VGS = 10V, ID = 5A; pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 2.1 | 4.2 | S | VDS = 10V, ID = 5A; pulsed | 2 | |
| Continuous forward current | IS | 10 | A | TC = 25℃ | 3 | ||
| Pulse forward current | ISP | 40 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 | ||
| Forward voltage | VSD | 1.5 | V | VGS = 0V, IS = 10A; pulsed | 3 |
CAD (KiCad official)
- Symbol:
RD3T100CNTL1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3t100cntl1-etched.step/rd3t100cntl1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3t100cntl1.step/rd3t100cntl1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
ba38190aa655138e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).