component
TT0501SBX
Public Made by Adomby adom
Shenzhen JingYang ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTT0501SBX
Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TT0501SBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O_1 | bidirectional | Bidirectional TVS clamp on one high-speed data, control or power line, with nominal reverse working voltage VRWM of 5.0 V and typical parasitic capacitance of 0.35 pF. |
| 2 | I/O_2 | bidirectional | Bidirectional TVS clamp on the same protected line as I/O_1 (Between I/O and I/O), with reverse leakage of 0.1 µA maximum at VRWM = 5 V and peak pulse current IPP of 4 A (tp = 8/20 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage @ IT | VBR | 6 | 8 | V | IT = 1mA, Between I/O and I/O | 2 | |
| Reverse Leakage Current @ VRWM | IR | 0.01 | 0.1 | μA | VRWM = 5V, T = 25C, Between I/O and I/O | 2 | |
| Clamping Voltage @ IPP | VC | 12 | V | IPP = 1A, tp = 8/20μs, Between I/O and I/O | 2 | ||
| Nominal Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| ESD per IEC 61000-4-2 (Air) | VESD | -25 | 25 | kV | IEC 61000-4-2 (Air) | 2 | |
| ESD per IEC 61000-4-2 (Contact) | VESD | -20 | 20 | kV | IEC 61000-4-2 (Contact) | 2 | |
| Peak Pulse Current | IPP | 4 | A | tp=8/20us | 2 | ||
| Peak Pulse Power | PPK | 40 | W | 8/20μs | 2 | ||
| Operating Temperature | TOPT | -55 | 125 | °C | 2 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 | ||
| Parasitic Capacitance | CESD | 0.35 | pF | VR = 0V, f = 1MHz, Between I/O and I/O | 2 |
CAD (KiCad official)
- Symbol:
TT0501SBX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
tt0501sbx-etched.step/tt0501sbx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tt0501sbx.step/tt0501sbx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (6 pp, sha256
052c27c831ac5223, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).