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FDD770N15A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD770N15A-VB
VBsemi Elec · MOSFETs · TO-252
FDD770N15A-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) of 1.5 V min to 3.0 V max at ID = 250 µA. |
| 2 | D | passive | Drain (center pin, also the mounting tab); VDS is rated 150 V and continuous drain current is 25.4 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source-drain diode current is 4.5 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 25.4 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 23.1 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 15.5 | A | TA = 25 °C, t ≤ 10 s | 1 | ||
| Continuous Drain Current | ID | 14.5 | A | TA = 70 °C, t ≤ 10 s | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 4.5 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.6 | A | TA = 25 °C, t ≤ 10 s | 1 | ||
| Single Pulse Avalanche Current | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 5.9 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.8 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.1 | W | TA = 25 °C, t ≤ 10 s | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 70 °C, t ≤ 10 s | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 33 | 40 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 17 | 21 | °C/W | Steady State | 1 | |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 150 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 120 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.074 | Ω | VGS = 10 V, ID = 5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.077 | Ω | VGS = 8 V, ID = 5 A | 2 | ||
| Total Gate Charge | Qg | 28.5 | 43 | nC | VDS = 75 V, VGS = 10 V, ID = 5 A | 2 | |
| Total Gate Charge | Qg | 23 | 35 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A | 2 | |
| Gate Resistance | Rg | 0.85 | 1.3 | Ω | f = 1 MHz | 2 | |
| Turn-on Delay Time | td(on) | 14 | 21 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 22 | 33 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 6 | 10 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 16 | 24 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 20 | 30 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 7 | 12 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 7.7 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 50 | A | 2 | |||
| Body Diode Voltage | VSD | 0.77 | 1.2 | V | IS = 2.6 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 63 | 95 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 110 | 165 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
FDD770N15A-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd770n15a-vb-etched.step/fdd770n15a-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd770n15a-vb.step/fdd770n15a-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
bc71cc03c6901472, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).