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IDH04SG60C
Public Made by Adomby adom
Infineon Technologies SiC Diodes, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIDH04SG60C
Infineon Technologies · SiC Diodes · TO-220-2
IDH04SG60C from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode of the diode; the datasheet gives the device ratings (repetitive peak reverse voltage V_RRM 600 V at Tj=25 °C, continuous forward current I_F 4 A at TC<130 °C) but no pin-specific limits. |
| 2 | A | passive | Anode of the diode; the datasheet gives the device ratings (repetitive peak reverse voltage V_RRM 600 V at Tj=25 °C, continuous forward current I_F 4 A at TC<130 °C) but no pin-specific limits. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous forward current | IF | 4 | A | TC<130 °C | 1 | ||
| Non-repetitive peak forward current, sine halfwave | IF,SM | 18 | A | TC=25 °C, tp=10 ms | 1 | ||
| Non-repetitive peak forward current, sine halfwave | IF,SM | 13.5 | A | TC=150 °C, tp=10 ms | 1 | ||
| Non-repetitive peak forward current | IF,max | 120 | A | TC=25 °C, tp=10 µs | 1 | ||
| i²t value | ∫i²dt | 1.8 | A²s | TC=25 °C, tp=10 ms | 1 | ||
| i²t value | ∫i²dt | 0.93 | A²s | TC=150 °C, tp=10 ms | 1 | ||
| Repetitive peak reverse voltage | VRRM | 600 | V | Tj=25 °C | 1 | ||
| Diode dv/dt ruggedness | dv/dt | 50 | V/ns | VR=0….480 V | 1 | ||
| Power dissipation | Ptot | 43 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Soldering temperature, wavesoldering only allowed at leads | Tsold | 260 | °C | 1.6 mm (0.063 in.) from case for 10 s | 1 | ||
| Mounting torque M3 and M3.5 screws | 60 | Ncm | 1 | ||||
| Thermal resistance, junction - case | RthJC | 3.5 | K/W | 2 | |||
| Thermal resistance, junction - ambient, leaded | RthJA | 62 | K/W | 2 | |||
| DC blocking voltage | VDC | 600 | V | IR=0.05 mA, Tj=25 °C | 2 | ||
| Diode forward voltage | VF | 2.3 | V | IF=4 A, Tj=25 °C | 2 | ||
| Reverse current | IR | 25 | µA | VR=600 V, Tj=25 °C | 2 | ||
| Reverse current | IR | 270 | µA | VR=600 V, Tj=150 °C | 2 | ||
| Switching time | tc | 10 | ns | 2 |
CAD (KiCad official)
- Symbol:
IDH04SG60C - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
idh04sg60c-etched.step/idh04sg60c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);idh04sg60c.step/idh04sg60c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (7 pp, sha256
2e2844769088bde6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).