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BSC0702LSATMA1-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSC0702LSATMA1-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
BSC0702LSATMA1-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel SGT MOSFET, one of three source pins (VDS 60V, ID 125A at TC=25℃ for the device). |
| 2 | S | passive | Source of the N-channel SGT MOSFET, one of three source pins (VDS 60V, ID 125A at TC=25℃ for the device). |
| 3 | S | passive | Source of the N-channel SGT MOSFET, one of three source pins (VDS 60V, ID 125A at TC=25℃ for the device). |
| 4 | G | input | Gate of the MOSFET, rated ±20V gate-source with threshold 1.2V to 2.2V at ID=250μA and RDS(on) below 2.9mΩ at VGS=10V. |
| 5 | D | passive | Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃. |
| 6 | D | passive | Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃. |
| 7 | D | passive | Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃. |
| 8 | D | passive | Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 2.4 | 2.9 | mΩ | VGS=10V, ID=20A | 2 | |
| Input Capacitance | Ciss | 4610 | 6915 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | |
| Output Capacitance | Coss | 2188 | 3282 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | |
| Total Gate Charge | Qg | 74.37 | nC | VDS=30V, ID=40A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 17.26 | nC | VDS=30V, ID=40A, VGS=10V | 2 | ||
| Gate-Drain (Miller) Charge | Qgd | 9.44 | nC | VDS=30V, ID=40A, VGS=10V | 2 | ||
| Turn-off Fall Time | tf | 105.07 | ns | VDD=30V, ID=40A, RG=2.7Ω, VGS=10V | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 125 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 641 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=40A | 2 | ||
| Body Diode Reverse Recovery Time | trr | 52.78 | ns | TJ=25℃, IF=40A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 56.31 | nC | 2 | |||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | 125 | A | 1 | |||
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | 101 | A | 1 | |||
| Pulsed Drain Current | IDM | 641 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 189 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 113 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.11 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 39.4 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
BSC0702LSATMA1-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
bsc0702lsatma1-hxy-etched.step/bsc0702lsatma1-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc0702lsatma1-hxy.step/bsc0702lsatma1-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (8 pp, sha256
90621ccb6aba49b5, retrieved 2026-11-08, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).