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Contents

README

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WST06P06

Winsok Semicon · MOSFETs · SOT-23-3L

WST06P06 from Winsok Semicon, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, rated for a maximum gate-source voltage of ±20 V, with a gate threshold voltage of -1.2 V min to -2.5 V max at ID=-250uA.
2 S passive Source terminal of the P-channel MOSFET, with a continuous source current of -5 A max through the body diode.
3 D passive Drain terminal, rated for -60 V drain-source voltage and -5.5 A continuous drain current at TC=25℃ (pulsed -20 A).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-23-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, -VGS @ -10V (TC=25℃) ID -5.5 A TC=25℃ 1
Continuous Drain Current, -VGS @ -10V (TC=100℃) ID -3.5 A TC=100℃ 1
Pulsed Drain Current IDM -20 A 1
Single Pulse Avalanche Energy EAS 15 mJ 1
Avalanche Current IAS -20 A 1
Total Power Dissipation (TC=25℃) PD 1.5 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W Footnote 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 80 ℃/W Footnote 1 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 80 90 mΩ VGS=-10V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 100 150 mΩ VGS=-4.5V, ID=-2A 2
Gate Threshold Voltage VGS(th) -1.2 -1.75 -2.5 V 2
Drain-Source Leakage Current IDSS 1 uA VDS=-32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 13 16 Ω VDS=0V, VGS=0V, f=1MHz 2
Single Pulse Avalanche Energy EAS 10 mJ VDD=-25V, L=0.1mH, IAS=-24A 2
Continuous Source Current IS -5 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WST06P06
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: wst06p06-etched.step / wst06p06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wst06p06.step / wst06p06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 7f2bdfa5d30dc7d4, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF