Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

KY6802

KY · MOSFETs · SOT-23-6L

KY6802 from KY, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the first N-channel MOSFET; the datasheet gives VGSS of ±12 V as the absolute maximum gate-source voltage for the device.
2 S2 passive Source of the second N-channel MOSFET; the datasheet gives VDSS of 20 V as the drain-source voltage limit for the device.
3 G2 input Gate of the second N-channel MOSFET; the datasheet gives VGSS of ±12 V as the absolute maximum gate-source voltage for the device.
4 D2 passive Drain of the second N-channel MOSFET; the datasheet gives ID of 3 A continuous and IDM of 12 A pulsed drain current for the device.
5 S1 passive Source of the first N-channel MOSFET; the datasheet gives VDSS of 20 V as the drain-source voltage limit for the device.
6 D1 passive Drain of the first N-channel MOSFET; the datasheet gives ID of 3 A continuous and IDM of 12 A pulsed drain current for the device.

Key specifications

Parameter Value
Manufacturer KY
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 1
Gate-Source Voltage VGSS -12 12 V 1
Continuous Drain Current ID 3 A 1
Pulsed Drain Current IDM 12 A 1
Total Power Dissipation Ptot 0.83 W 1
Thermal Resistance, Junction to Ambient RθJA 150 ℃/W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Junction Temperature TJ 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 19V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VGS = ±12V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1 V VDS = VGS, ID = 250μA 2
On-State Resistance RDS(ON) 55 mΩ VGS = 4.5V, ID = 3A 2
On-State Resistance RDS(ON) 85 mΩ VGS = 2.5V, ID = 2A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS = 0V, ISD = 3A, TJ = 25℃ 2
Reverse Recovery Time trr 10 ns VGS = 0V, IS = 3A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 3 nC 2

CAD (KiCad official)

  • Symbol: KY6802
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: ky6802-etched.step / ky6802-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ky6802.step / ky6802.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KY datasheet (5 pp, sha256 f1eab34e543bc9b3, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF