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Contents

README

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BR24T08FVM-WGTR

ROHM Semicon · EEPROM · MSOP-8

BR24T08FVM-WGTR from ROHM Semicon, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A0 unconnected Not used as a device address pin; it may be set to H, L or Hi-Z.
2 A1 unconnected Not used as a device address pin; it may be set to H, L or Hi-Z.
3 A2 input Slave address setting input that must not be left open.
4 GND power_in Reference voltage for all inputs and outputs, 0V.
5 SDA bidirectional Serial data input and serial data output.
6 SCL input Serial clock input.
7 WP input Write protect input terminal.
8 VCC power_in Connect the power source.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package MSOP-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC -0.3 6.5 V 2
Storage Temperature Tstg -65 150 °C 2
Operating Temperature Topr -40 85 °C 2
Input Voltage / Output Voltage -0.3 V max Vcc+1.0 V, not over 6.5V; min -0.8V when pulse width 50ns or less 2
Junction Temperature Tjmax 150 °C Junction temperature at the storage condition 2
Electrostatic discharge voltage (human body model) VESD -4000 4000 V human body model 2
Power Dissipation (MSOP8) Pd 310 mW Derate by 3.1mW/°C when operating above Ta=25°C 2
Power Source Voltage VCC 1.6 5.5 V 2
Input Voltage VIN 0 V max Vcc 2
Write Cycles 1e+06 Times Ta=25°C, Vcc=1.6V to 5.5V; not 100% tested 2
Data Retention 40 Years Ta=25°C, Vcc=1.6V to 5.5V; not 100% tested 2
Input High Voltage1 VIH1 0.7 V Vcc min 0.7Vcc; max Vcc+1.0; 1.7V Vcc 5.5V 2
Input High Voltage1 (max) VIH1 1 V max Vcc+1.0; 1.7V Vcc 5.5V 2
Input Low Voltage1 VIL1 -0.3 0.3 V max +0.3Vcc; 1.7V Vcc 5.5V 2
Input High Voltage2 VIH2 0.8 V min 0.8Vcc; max Vcc+1.0; 1.6V Vcc 1.7V 2
Input High Voltage2 (max) VIH2 1 V max Vcc+1.0; 1.6V Vcc 1.7V 2
Input Low Voltage2 VIL2 -0.3 0.2 V max +0.2Vcc; 1.6V Vcc 1.7V 2
Output Low Voltage1 VOL1 0.4 V IOL=3.0mA, 2.5V Vcc 5.5V (SDA) 2
Output Low Voltage2 VOL2 0.2 V IOL=0.7mA, 1.6V Vcc 2.5V (SDA) 2
Input Leakage Current ILI -1 1 µA VIN=0 to Vcc 2
Output Leakage Current ILO -1 1 µA VOUT=0 to Vcc (SDA) 2
Supply Current (Write) ICC1 2 mA Vcc=5.5V, fSCL=400kHz, tWR=5ms, Byte write, Page write 2
Supply Current (Read) ICC2 0.5 mA Vcc=5.5V, fSCL=400kHz; Random read, current read, sequential read 2
Standby Current ISB 2 µA Vcc=5.5V, SDA SCL=Vcc, A0,A1,A2=GND,WP=GND 2
Clock Frequency fSCL 400 kHz Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Data Clock High Period tHIGH 0.6 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Data Clock Low Period tLOW 1.2 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
SDA,SCL(INPUT) Rise Time (1) tR 1 µs Not 100% tested; Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
SDA,SCL (INPUT) Fall Time (1) tF1 1 µs Not 100% tested; Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
SDA(OUTPUT) Fall Time (1) tF2 0.3 µs Not 100% tested; Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Start Condition Hold Time tHD:STA 0.6 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Start Condition Setup Time tSU:STA 0.6 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Input Data Hold Time tHD:DAT 0 ns Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Input Data Setup Time tSU:DAT 100 ns Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Output Data Delay Time tPD 0.1 0.9 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Output Data Hold Time tDH 0.1 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Stop Condition Setup Time tSU:STO 0.6 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Bus Free Time tBUF 1.2 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Write Cycle Time tWR 5 ms Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Noise Spike Width (SDA and SCL) tI 0.1 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
WP Hold Time tHD:WP 1 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
WP Setup Time tSU:WP 0.1 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
WP High Period tHIGH:WP 1 µs Ta= -40°C to +85°C, Vcc=1.6V to 5.5V 3
Low Voltage Malfunction Prevention (LVCC) voltage 1.2 V Data rewrite prevented at LVCC voltage or below 21
Vbot (power-up recommended condition) Vbot 0.3 V tR 10ms or below, tOFF 10ms or larger 21
Vbot (power-up recommended condition) Vbot 0.2 V tR 100ms or below, tOFF 10ms or larger 21

CAD (KiCad official)

  • Symbol: BR24T08FVM-WGTR
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: br24t08fvm-wgtr-etched.step / br24t08fvm-wgtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); br24t08fvm-wgtr.step / br24t08fvm-wgtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (38 pp, sha256 f6be3c61f1c6aea4, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF