Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SK04N65B

Shikues · MOSFETs · TO-252

SK04N65B from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rated ±30 V max, with threshold VGS(TH) 2.0 to 4.0 V at VDS=VGS, ID=250uA.
2 D passive Drain; drain-to-source voltage rated 650 V with 4.0 A continuous drain current (16 A pulsed).
3 S passive Source; body diode continuous source current ISD 4.0 A max (16 A pulsed).

Key specifications

Parameter Value
Manufacturer Shikues
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain-to-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V 2
Drain-to-Source Leakage Current (TJ=125℃) IDSS 100 uA VDS=520V, VGS=0V, TJ=125℃ 2
Gate-to-Source Leakage Current IGSS 10 uA VGS=+20V, VDS=0V 2
Gate-to-Source Leakage Current IGSS -10 uA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 2.3 2.6 Ω VGS=10V, ID=2.0A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Continuous Source Current ISD 4 A Integral pn-diode in MOSFET 3
Pulsed Source Current ISM 16 A 3
Diode Forward Voltage VSD 1.5 V IS=4A, VGS=0V 3
Drain-to-Source Voltage VDSS 650 V 1
Gate-to-Source Voltage VGSS -30 30 V 1
Continuous Drain Current ID 4 A 1
Pulsed Drain Current IDM 16 A VGS=10V 1
Single Pulse Avalanche Energy EAS 250 mJ 1
Power Dissipation PD 86 W 1
Soldering Temperature TL 300 ℃ Distance of 1.6mm from case for 10 seconds 1
Operating and Storage Temperature Range TJ & TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.45 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 75 ℃/W 1

CAD (KiCad official)

  • Symbol: SK04N65B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sk04n65b-etched.step / sk04n65b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sk04n65b.step / sk04n65b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (8 pp, sha256 ec81ab27decdbcf3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF