component
MMBT4403M3T5G
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT4403M3T5G
onsemi · Bipolar Transistors - BJT · SOT-723
MMBT4403M3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP switching transistor; emitter-base voltage limited to -5.0 Vdc (VEBO). |
| 2 | EMITTER | passive | Emitter of the PNP transistor; VCEO -40 Vdc and continuous collector current -600 mAdc flow between collector and emitter. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; rated VCEO -40 Vdc, VCBO -40 Vdc and IC -600 mAdc continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc | 2 | |||
| Collector-Base Voltage | VCBO | -40 | Vdc | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 2 | |||
| Collector Current - Continuous | IC | -600 | mAdc | 2 | |||
| Total Device Dissipation FR-5 Board | PD | 265 | mW | FR-5 Board (Note 1), TA = 25°C | 2 | ||
| Total Device Dissipation Alumina Substrate | PD | 640 | mW | Alumina Substrate (Note 2), TA = 25°C | 2 | ||
| Thermal Resistance Junction-to-Ambient (FR-5) | RθJA | 470 | °C/W | FR-5 Board | 2 | ||
| Thermal Resistance Junction-to-Ambient (Alumina) | RθJA | 195 | °C/W | Alumina Substrate | 2 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | Vdc | IC = -1.0 mAdc, IB = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | Vdc | IC = -0.1 mAdc, IE = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -0.1 mAdc, IC = 0 | 3 | ||
| Base Cutoff Current | IBEV | -0.1 | µAdc | VCE = -35 Vdc, VEB = -0.4 Vdc | 3 | ||
| Collector Cutoff Current | ICEX | -0.1 | µAdc | VCE = -35 Vdc, VEB = -0.4 Vdc | 3 | ||
| DC Current Gain | hFE | 30 | IC = -0.1 mAdc, VCE = -1.0 Vdc | 3 | |||
| DC Current Gain | hFE | 60 | IC = -1.0 mAdc, VCE = -1.0 Vdc | 3 | |||
| DC Current Gain | hFE | 100 | IC = -10 mAdc, VCE = -1.0 Vdc | 3 | |||
| DC Current Gain | hFE | 100 | 300 | IC = -150 mAdc, VCE = -2.0 Vdc (Note 3) | 3 | ||
| DC Current Gain | hFE | 20 | IC = -500 mAdc, VCE = -2.0 Vdc (Note 3) | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.75 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.75 | -0.95 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 3 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 3 | ||
| Current-Gain Bandwidth Product | fT | 200 | MHz | IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz | 3 | ||
| Collector-Base Capacitance | Ccb | 8.5 | pF | VCB = -10 Vdc, IE = 0, f = 1.0 MHz | 3 | ||
| Emitter-Base Capacitance | Ceb | 30 | pF | VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz | 3 | ||
| Input Impedance | hie | 1.5 | 15 | kΩ | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 3 | |
| Voltage Feedback Ratio | hre | 0.1 | 8 | X 10-4 | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 3 | |
| Small-Signal Current Gain | hfe | 60 | 500 | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 3 | ||
| Output Admittance | hoe | 1 | 100 | µMhos | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 3 | |
| Delay Time | td | 15 | ns | VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 3 | ||
| Rise Time | tr | 20 | ns | VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 3 | ||
| Storage Time | ts | 225 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc | 3 | ||
| Fall Time | tf | 30 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc | 3 |
CAD (KiCad official)
- Symbol:
MMBT4403M3T5G - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
mmbt4403m3t5g-etched.step/mmbt4403m3t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt4403m3t5g.step/mmbt4403m3t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
10fca1cdc6b14408, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).