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Contents

README

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AGM3401E

AGM-Semi · MOSFETs · SOT-23-3

AGM3401E from AGM-Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel MOSFET, with VGS rated ±12 V max and threshold VGS(th) of -0.6 V to -1.3 V at ID=-250µA.
2 S passive Source; main current terminal of the P-channel MOSFET, with continuous body-diode current ISD up to -4.4 A.
3 D passive Drain; drain-source voltage rated -30 V max, with continuous drain current of -4.4 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.6 -0.9 -1.3 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 43.5 49 mΩ VGS=-10V, ID=-3A 2
Drain-Source On-State Resistance RDS(on) 49.5 57 mΩ VGS=-4.5V, ID=-2A 2
Source-Drain Current (Body Diode) ISD -4.4 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-3A 2
Drain-Source Voltage VDS -30 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -12 12 V VDS=0V, TA=25℃ 1
Drain Current-Continuous ID -4.4 A TA=25℃ 1
Drain Current-Continuous ID -2.6 A TA=70℃ 1
Maximum Power Dissipation PD 1.2 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ 1
Thermal Resistance Junction-ambient RθJA 104 ℃/W Steady State 1
Maximum Junction-to-Lead RθJL 63 80 ℃/W Steady State 1
Forward Transconductance gFS 3 S VDS=-5V,ID=-2A 2
Input Capacitance Ciss 1040 pF VDS=-15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 80 pF VDS=-15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 68 pF VDS=-15V,VGS=0V, F=1MHZ 2
Gate resistance Rg 15 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 4.4 nS VGS=-10V,VDS=-15V, RGEN=3Ω,ID=-4.4A 2
Turn-on Rise Time tr 26 nS VGS=-10V,VDS=-15V, RGEN=3Ω,ID=-4.4A 2
Turn-Off Delay Time td(off) 49 nS VGS=-10V,VDS=-15V, RGEN=3Ω,ID=-4.4A 2
Turn-Off Fall Time tf 43 nS VGS=-10V,VDS=-15V, RGEN=3Ω,ID=-4.4A 2
Total Gate Charge Qg 22 nC VGS=-10V, VDS=-15V, ID=-4.4A 2
Gate-Source Charge Qgs 3.2 nC VGS=-10V, VDS=-15V, ID=-4.4A 2
Gate-Drain Charge Qgd 2.1 nC VGS=-10V, VDS=-15V, ID=-4.4A 2
Reverse Recovery Time trr 10 ns IF=-3A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 16 nc IF=-3A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM3401E
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: agm3401e-etched.step / agm3401e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm3401e.step / agm3401e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 cbefcd009a153826, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF