component
2N5401G-B-T92-B
Public Made by Adomby adom
UTC(Unisonic Tech) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N5401G-B-T92-B
UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-92
2N5401G-B-T92-B from UTC(Unisonic Tech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the PNP transistor, with emitter-base voltage VEBO rated at -5 V. |
| 2 | B | passive | Base terminal of the PNP transistor, with emitter-base breakdown voltage BVEBO of -5 V at IE = -10μA. |
| 3 | C | passive | Collector terminal of the PNP transistor, rated for collector-emitter voltage VCEO of -150 V and collector current IC of -600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -160 | V | IC = -100μA, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -150 | V | IC = -1mA, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -10μA, IC = 0 | 2 | ||
| Collector Cut-off Current | ICBO | -50 | nA | VCB = -120V, IE = 0 | 2 | ||
| Emitter Cut-off Current | IEBO | -50 | nA | VEB = -3V, IC = 0 | 2 | ||
| DC Current Gain | hFE1 | 80 | VCE = -5V, IC = -1mA | 2 | |||
| DC Current Gain | hFE2 | 80 | 400 | VCE = -5V, IC = -10mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.2 | V | IC = -10mA, IB = -1mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.5 | V | IC = -50mA, IB = -5mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | -1 | V | IC = -10mA, IB = -1mA | 2 | ||
| Current Gain Bandwidth Product | fT | 100 | 400 | MHz | VCE = -10V, IC = -10mA, f = 100MHz | 2 | |
| Output Capacitance | COB | 6 | pF | VCB = -10V, IE = 0, f = 1MHz | 2 | ||
| Noise Figure | NF | 8 | dB | IC = -0.25mA, VCE = -5V, RS = 1k, f = 10Hz ~ 15.7kHz | 2 | ||
| Collector-Base Voltage | VCBO | -160 | V | TA=25C | 2 | ||
| Collector-Emitter Voltage | VCEO | -150 | V | TA=25C | 2 | ||
| Emitter-Base Voltage | VEBO | -5 | V | TA=25C | 2 | ||
| Collector Current | IC | -600 | mA | TA=25C | 2 | ||
| Collector Dissipation | PC | 625 | mW | TO-92 package, TA=25C | 2 | ||
| Junction Temperature | TJ | 150 | C | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | C | 2 |
CAD (KiCad official)
- Symbol:
2N5401G-B-T92-B - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
2n5401g-b-t92-b-etched.step/2n5401g-b-t92-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n5401g-b-t92-b.step/2n5401g-b-t92-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (4 pp, sha256
e1a4aac50b129fef, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).