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Contents

README

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IRF630

STMicroelectronics · MOSFETs · TO-220

IRF630 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; the datasheet limits the gate-source voltage to ±20 V (Table 1) and gives a gate threshold VGS(th) of 2 to 4 V at ID = 250 µA (Table 3).
2 D passive Drain, electrically connected to the metal TAB of the TO-220 package; the datasheet limits drain-source voltage to 200 V and continuous drain current to 9 A at TC = 25 °C (Table 1).
3 S passive Source, the reference terminal for the gate-source voltage (±20 V) and drain-source voltage (200 V) ratings in Table 1.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IRF630
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irf630-etched.step / irf630-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf630.step / irf630.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 c4325f16b34a9785, retrieved 2026-10-08, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF