component
SS8050-HF
Public Made by Adomby adom
Comchip Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSS8050-HF
Comchip · Bipolar (BJT) · SOT-23
SS8050-HF from Comchip, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the SS8050-HF NPN general-purpose transistor; the datasheet gives the emitter-base voltage limit (VEBO, 5 V maximum rating) but no separate base current rating. |
| 2 | EMITTER | passive | Emitter terminal of the SS8050-HF NPN transistor; the emitter-base breakdown voltage V(BR)EBO is at least 5 V at IE=100µA with IC=0. |
| 3 | COLLECTOR | passive | Collector terminal of the SS8050-HF NPN transistor, rated for a collector current IC of 1.5 A with a collector-emitter voltage VCEO of 25 V and a collector-base voltage VCBO of 40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Comchip |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base breakdown voltage | V(BR)CBO | 40 | V | IC=100μA, IE=0 | 1 | ||
| Collector-Emitter breakdown voltage | V(BR)CEO | 25 | V | IC=0.1mA, IB=0 | 1 | ||
| Emitter-Base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | µA | VCB=40V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB=5V, IC=0 | 1 | ||
| Collector-Emitter saturation voltage | VCE(sat) | 0.5 | V | IC=800mA, IB=80mA | 1 | ||
| Base-Emitter saturation voltage | VBE(sat) | 1.2 | V | IC=800mA, IB=80mA | 1 | ||
| DC current gain | hFE(1) | 200 | 350 | VCE=1V, IC=100mA | 1 | ||
| DC current gain | hFE(2) | 40 | 100 | VCE=1V, IC=800mA | 1 | ||
| Collector-Collector max current | VCBO | 40 | V | 1 | |||
| Collector-Emitter voltage | VCEO | 25 | V | 1 | |||
| Emitter-Base voltage | VEBO | 5 | V | 1 | |||
| Collector current | IC | 1.5 | A | 1 | |||
| Collector power dissipation | PC | 300 | mW | 1 | |||
| Operation junction and storage temperature range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 417 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SS8050-HF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ss8050-hf-etched.step/ss8050-hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss8050-hf.step/ss8050-hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Comchip datasheet (5 pp, sha256
55bb1c69222989c5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).