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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

HKTD70N04

Guangdong Hottech · MOSFETs · TO-252

HKTD70N04 from Guangdong Hottech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; controls the channel, with absolute maximum VGS of ±20V and threshold VGS(th) of 1.0V min to 2.0V max at ID=250μA.
2	D	passive	Drain (also the exposed tab); VDS max 40V and continuous ID 70A, with RDS(ON) of 9.5mΩ max at VGS=10V, ID=15A.
3	S	passive	Source; carries the full drain current up to 70A continuous and 280A pulsed, and the body diode conducts from source to drain.

Key specifications

Parameter	Value
Manufacturer	Guangdong Hottech
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source breakdown voltage	V(BR)DS	40			V	VGS=0V, ID=250μA	2
Zero gate voltage drain current	IDSS			1	uA	VDS=40V, VGS=0V	2
Gate-body leakage current	IGSS	-100		100	nA	VDS=0V, VGS=±20V	2
Gate-threshold voltage	VGS(th)	1	1.4	2	V	VDS=VGS, ID=250μA	2
Drain-source on-resistance	RDS(ON)		7.5	9.5	mΩ	VGS=10V, ID=15A	2
Drain-source on-resistance	RDS(ON)		10	13.5	mΩ	VGS=4.5V, ID=8A	2
Diode forward voltage	VSD			1.2	V	IS=20A, VGS=0V	2
Max. forward current (diode)	IS			70	A		2
Pulsed drain-source diode forward current	ISM			280	A		2
Drain-source voltage	VDS			40	V	TA=25°C	1
Gate-source voltage	VGS	-20		20	V	TA=25°C	1
Continuous drain current	ID			70	A	TA=25°C	1
Pulsed drain current	IDM			280	A	Note 1	1
Power dissipation	PD			60	W	TA=25°C	1
Single Pulsed Avalanche Energy	EAS			66	mJ	VDD=20V, L=0.5mH, RG=25Ω, Starting TJ=25°C	1
Lead Temperature for Soldering Purposes	TL			260	°C	1/8 in from case for 10s	1
Operating junction and storage temperature	TJ,TSTG	-55		150	°C		1
Thermal resistance from junction to ambient	RθJA			108	°C/W		1
Forward transconductance	gFS		10		S	VDS=5V, ID=70A	2
Input capacitance	Ciss		4300		pF	VGS=0V, VDS=20V, f=1.0MHz	2
Output capacitance	Coss		250		pF	VGS=0V, VDS=20V, f=1.0MHz	2
Reverse transfer capacitance	Crss		188		pF	VGS=0V, VDS=20V, f=1.0MHz	2
Turn-on delay time	td(on)		7		ns	VDD=20V, ID=20A, RG=3Ω, VGS=10V	2
Turn-on rise time	tr		5		ns	VDD=20V, ID=20A, RG=3Ω, VGS=10V	2
Turn-off delay time	td(off)		25		ns	VDD=20V, ID=20A, RG=3Ω, VGS=10V	2
Turn-off fall time	tf		5		ns	VDD=20V, ID=20A, RG=3Ω, VGS=10V	2
Total gate charge	Qg		58		nC	VDS=20V, VGS=10V, ID=20A	2
Gate-source charge	Qgs		10		nC	VDS=20V, VGS=10V, ID=20A	2
Gate-drain charge	Qgd		10		nC	VDS=20V, VGS=10V, ID=20A	2

CAD (KiCad official)

Symbol: HKTD70N04
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: hktd70n04-etched.step / hktd70n04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hktd70n04.step / hktd70n04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Guangdong Hottech datasheet (5 pp, sha256 dcca9e729a2d843a, retrieved 2026-10-21, tier: lcsc)
Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF