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IRLML0060TRPBF

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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IRLML0060TRPBF

Infineon Technologies · MOSFETs · SOT-23

IRLML0060TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS max ±16 V, gate threshold voltage 1.0 V min to 2.5 V max at VDS = VGS, ID = 25μA.
2 S passive Source; the continuous source (body diode) current is 1.6 A and the pulsed source current is 11 A.
3 D passive Drain; VDS is 60 V max and continuous drain current is 2.7 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Continuous Drain Current, TA = 25°C ID @ TA = 25°C 2.7 A VGS @ 10V 1
Continuous Drain Current, TA = 70°C ID @ TA = 70°C 2.1 A VGS @ 10V 1
Pulsed Drain Current IDM 11 A 1
Maximum Power Dissipation, TA = 25°C PD @TA = 25°C 1.25 W 1
Maximum Power Dissipation, TA = 70°C PD @TA = 70°C 0.8 W 1
Linear Derating Factor 0.01 W/°C 1
Gate-to-Source Voltage VGS -16 16 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient RJA 100 °C/W 1
Junction-to-Ambient (t<10s) RJA 99 °C/W t<10s 1
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 98 116 mΩ VGS = 4.5V, ID = 2.2A 2
Static Drain-to-Source On-Resistance RDS(on) 78 92 mΩ VGS = 10V, ID = 2.7A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 25μA 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 60V, VGS = 0V 2
Drain-to-Source Leakage Current, TJ = 125°C IDSS 250 μA VDS = 60V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage -100 nA VGS = -20V 2
Forward Transconductance gfs 7.6 S VDS = 25V, ID = 2.7A 2
Reverse Recovery Time trr 14 21 ns TJ = 25°C, VR = 30V, IF=1.6A 2
Reverse Recovery Charge Qrr 13 20 nC TJ = 25°C, VR = 30V, IF=1.6A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 2.7A, VGS = 0V 2
Continuous Source Current (Body Diode) IS 1.6 A 2
Pulsed Source Current (Body Diode) ISM 11 A 2
Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ 0.06 V/°C Reference to 25°C, ID = 1mA 2
Internal Gate Resistance RG 1.6 2
Total Gate Charge Qg 2.5 nC 2
Gate-to-Source Charge Qgs 0.7 nC 2
Gate-to-Drain (Miller) Charge Qgd 1.3 nC 2
Turn-On Delay Time td(on) 5.4 ns 2
Rise Time tr 6.3 ns 2
Turn-Off Delay Time td(off) 6.8 ns 2
Fall Time tf 4.2 ns 2
Input Capacitance Ciss 290 pF 2
Output Capacitance Coss 37 pF 2
Reverse Transfer Capacitance Crss 21 pF 2

CAD (KiCad official)

  • Symbol: IRLML0060TRPBF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml0060trpbf-etched.step / irlml0060trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml0060trpbf.step / irlml0060trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 1ae7289b2b3c500f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF