component
LE25U20AFD-AH
Public Made by Adomby adom
onsemi NOR FLASH, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLE25U20AFD-AH
onsemi · NOR FLASH · SOIC-8
LE25U20AFD-AH from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CS | input | Chip select: the device is active when this pin is low and deselected into standby when it is high. |
| 2 | SO | output | Serial data output: stored data is output synchronized to the falling edge of SCK, and the pin is high-impedance when the device is deselected. |
| 3 | WP | input | Write protect: the status register write protect (SRWP) takes effect when this pin is low. |
| 4 | VSS | power_in | Ground, supplies the 0 V supply voltage. |
| 5 | SI | input | Serial data input: data and addresses are input here and latched on the rising edge of SCK. |
| 6 | SCK | input | Serial clock: controls data input/output timing, with input latched on the rising edge and output on the falling edge. |
| 7 | HOLD | input | Hold: serial communication is suspended when this pin is low. |
| 8 | VDD | power_in | Power supply pin, supplies the 2.30 to 3.60 V supply voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Memory |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating supply voltage | VDD | 2.3 | 3.6 | V | 16 | ||
| Operating ambient temperature | Topr | -40 | 85 | °C | 16 | ||
| Maximum supply voltage | VDD max | -0.5 | 4.6 | V | With respect to VSS | 16 | |
| DC voltage (all pins) | VIN/VOUT | -0.5 | V | With respect to VSS; upper limit VDD+0.5 | 16 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 16 | ||
| Read mode operating current | ICCR | 6 | mA | CS = 0.1VDD, HOLD = WP = 0.9VDD, SI = 0.1VDD / 0.9VDD, SO = open, 30 MHz, VDD = VDD max | 16 | ||
| Write mode operating current (erase+page program) | ICCW | 15 | mA | VDD = VDD max, tSSE = 40 ms, tSE = 80 ms, tCHE = 160 ms, tPP = 5.0 ms | 16 | ||
| CMOS standby current | ISB | 50 | µA | CS = HOLD = WP = VDD, SI = VSS / VDD, SO = open, VDD = VDD max | 16 | ||
| Power-down standby current | IDSB | 10 | µA | CS = HOLD = WP = VDD, SI = VSS / VDD, SO = open, VDD = VDD max | 16 | ||
| Input leakage current | ILI | 2 | µA | VIN = VSS to VDD, VDD = VDD max | 16 | ||
| Output leakage current | ILO | 2 | µA | VIN = VSS to VDD, VDD = VDD max | 16 | ||
| Input low voltage | VIL | -0.3 | V | VDD = VDD max; upper limit 0.3VDD | 16 | ||
| Output low voltage | VOL | 0.2 | V | IOL = 100 µA, VDD = VDD min | 16 | ||
| Output low voltage | VOL | 0.4 | V | IOL = 1.6 mA, VDD = VDD min | 16 | ||
| Time from power-on to read operation | tPU_READ | 100 | µs | 16 | |||
| Time from power-on to write operation | tPU_WRITE | 10 | ms | 16 | |||
| Power-down time | tPD | 10 | ms | 16 | |||
| Power-down voltage | vBOT | 0.2 | V | 16 | |||
| Output pin capacitance | CDQ | 12 | pF | VDQ = 0 V, Ta = 25C, f = 1 MHz | 16 | ||
| Input pin capacitance | CIN | 6 | pF | VIN = 0 V, Ta = 25C, f = 1 MHz | 16 | ||
| Clock frequency | fCLK | 30 | MHz | 17 | |||
| SCK logic high level pulse width | tCLHI | 16 | ns | 17 | |||
| SCK logic low level pulse width | tCLLO | 16 | ns | 17 | |||
| Input signal rising/falling time | tRF | 20 | ns | 17 | |||
| CS setup time | tCSS | 10 | ns | 17 | |||
| CS hold time | tCSH | 10 | ns | 17 | |||
| Data setup time | tDS | 5 | ns | 17 | |||
| Data hold time | tDH | 5 | ns | 17 | |||
| CS wait pulse width | tCPH | 25 | ns | 17 | |||
| Output high impedance time from CS | tCHZ | 15 | ns | 17 | |||
| Output data time from SCK | tV | 15 | ns | 17 | |||
| Output data hold time | tHO | 1 | ns | 17 | |||
| HOLD setup time | tHS | 7 | ns | 17 | |||
| HOLD hold time | tHH | 3 | ns | 17 | |||
| Output low impedance time from HOLD | tHLZ | 9 | ns | 17 | |||
| Output high impedance time from HOLD | tHHZ | 9 | ns | 17 | |||
| WP setup time | tWPS | 20 | ns | 17 | |||
| WP hold time | tWPH | 20 | ns | 17 | |||
| Write status register time | tSRW | 5 | 15 | ms | 17 | ||
| Page programming cycle time | tPP | 4 | 5 | ms | 17 | ||
| Small sector erase cycle time | tSSE | 0.04 | 0.15 | s | 17 | ||
| Sector erase cycle time | tSE | 0.08 | 0.25 | s | 17 | ||
| Chip erase cycle time | tCHE | 0.25 | 1.6 | s | 17 | ||
| Power-down time | tDP | 3 | µs | 17 | |||
| Power-down recovery time | tPRB | 3 | µs | 17 | |||
| Output low impedance time from SCK | tCLZ | 0 | ns | 17 |
CAD (KiCad official)
- Symbol:
LE25U20AFD-AH - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
le25u20afd-ah-etched.step/le25u20afd-ah-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);le25u20afd-ah.step/le25u20afd-ah.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (21 pp, sha256
c044296517a12bca, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).