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SSF6014-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorssf6014-vbfactory-2.0.0extractor-text

Verified SSF6014-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SSF6014-VB · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-i3sttu6y/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ssf6014-vb.kicad_sym✓ ssf6014-vb.kicad_mod✓ ssf6014-vb.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SSF6014-VB

VBsemi Elec · MOSFETs · TO-220AB

SSF6014-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet limits gate-source voltage to ±20 V (VGS).
2 D passive Drain of the MOSFET; continuous drain current is 60 A at TC = 25 °C, limited by the package, with 175 °C maximum junction temperature.
3 S passive Source of the MOSFET; continuous source current (diode conduction) is 50 A, package limited.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 60 A TC = 25 °C 1
Continuous Drain Current ID 50 A TC = 100 °C 1
Pulsed Drain Current IDM 200 A 1
Continuous Source Current (Diode Conduction) IS 50 A 1
Avalanche Current IAS 50 A 1
Single Avalanche Energy EAS 125 mJ L = 0.1 mH, Duty Cycle 1 % 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 3 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient, t 10 sec RthJA 15 18 °C/W t 10 sec 1
Maximum Junction-to-Ambient, Steady State RthJA 40 50 °C/W Steady State 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W 1
Static Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 60 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.014 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.018 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.013 Ω VGS = 4.5 V, ID = 15 A 2
Forward Transconductance gfs 60 S VDS = 15 V, ID = 20 A 2
Input Capacitance Ciss 420 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 570 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 325 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Turn-On Delay Time td(on) 20 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 2
Turn-Off Delay Time td(off) 35 50 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 2
Fall Time tf 20 30 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 2.5 2
Pulsed Current ISM 60 A 2
Diode Forward Voltage VSD 1 1.5 V IF = 20 A, VGS = 0 V 2
Reverse Recovery Time trr 45 100 ns IF = 20 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: SSF6014-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: ssf6014-vb-etched.step / ssf6014-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssf6014-vb.step / ssf6014-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 e6d45729b43aea20, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF