component
CMPT8099-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCMPT8099-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
CMPT8099-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is limited to 5 V (VEBO) and the base-emitter saturation voltage is 1.15 V max at IC=1A, IB=100mA. |
| 2 | E | passive | Emitter of the NPN transistor, the common terminal for the base drive and the collector current. |
| 3 | C | passive | Collector of the NPN transistor, rated 100 V VCEO, 120 V VCBO and 1 A continuous (2 A peak pulse) collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 120 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 100 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 1 | A | 1 | |||
| Peak Pulse Current | IC0 | 2 | A | 1 | |||
| Collector Power Dissipation | PC | 250 | mW | 1 | |||
| Operation Junction and Storage Temperature Range | TJ Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 500 | °C/W | 1 | |||
| Collector-base breakdown voltage | VBRCBO | 120 | V | IC=100µA IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VBRCEO | 100 | V | IC=10mA IB=0 | 1 | ||
| Emitter-base breakdown voltage | VBREBO | 5 | V | IE=100µA IC=0 | 1 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=100V IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB=4V IC=0 | 1 | ||
| DC current gain2 | hFE2 | 300 | VCE=10V IC=500mA | 1 | |||
| DC current gain3 | hFE3 | 60 | VCE=10V IC=1A | 1 | |||
| DC current gain4 | hFE4 | 20 | VCE=10V IC=2A | 1 | |||
| Collector-emitter saturation voltage1 | VCEsat1 | 0.3 | V | IC=500mA IB=50mA | 1 | ||
| Collector-emitter saturation voltage2 | VCEsat2 | 0.6 | V | IC=1A IB=100mA | 1 | ||
| Base-emitter saturation voltage | VBEsat | 1.15 | V | IC=1A IB=100mA | 1 | ||
| Base-emitter voltage | VBE | 1 | V | VCE=5V IC=1A | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE=10V IC=50mA f=1000MHz | 1 | ||
| Collector output capacitance | Cob | 10 | pF | VCB=10V f=10MHz | 1 |
CAD (KiCad official)
- Symbol:
CMPT8099-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
cmpt8099-hxy-etched.step/cmpt8099-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmpt8099-hxy.step/cmpt8099-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
9fcea70b6535f6e7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).