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Contents

README

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BQ25895MRTWR

Texas Instruments · Battery Management · WQFN-24-EP(4x4)

BQ25895MRTWR from Texas Instruments, in a WQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VBUS power_in Input voltage from adapter, 3.9V to 14V; reverse-blocking MOSFET to PMID.
2 D+ bidirectional USB positive data line; BC1.2 detection and MaxCharge™ adapter identification.
3 D- bidirectional USB negative data line; BC1.2 detection and MaxCharge™ adapter identification.
4 STAT output Open-drain output: LOW=charging, HIGH=complete/disabled, 1Hz blink=fault condition.
5 SCL input I2C clock input with required 10 kΩ pull-up resistor.
6 SDA bidirectional I2C data input/output with required 10 kΩ pull-up resistor.
7 INT output Open-drain interrupt output; 256 µs active-low pulse on status/fault event.
8 OTG input Boost mode enable; activates when high and no VBUS present; output 5V at 3.1A.
9 CE input Active-low charge enable; charging requires CHG_CONFIG=1 and CE pin low.
10 ILIM input Analog input for current limit; regulated at 0.8V with external resistor to ground.
11 TS input Thermistor input; charging suspends when voltage outside programmed temperature range.
12 QON input BATFET control; logic low exits shipping mode or triggers system reset when VBUS absent.
13 BAT power_in Battery positive terminal; supports 2.5V to 5.0V with internal BATFET to SYS.
14 BAT power_in Battery positive terminal; supports 2.5V to 5.0V with internal BATFET to SYS.
15 SYS power_out System power output regulated above 3.5V minimum; supplied by battery through BATFET.
16 SYS power_out System power output regulated above 3.5V minimum; supplied by battery through BATFET.
17 PGND power_in Power ground for high-current converter; connected to LSFET source.
18 PGND power_in Power ground for high-current converter; connected to LSFET source.
19 SW passive Switching node connecting HSFET source and LSFET drain; 0.047 µF bootstrap capacitor to BTST required.
20 SW passive Switching node connecting HSFET source and LSFET drain; 0.047 µF bootstrap capacitor to BTST required.
21 BTST power_in Bootstrap supply for high-side driver; connected to boost-strap diode anode.
22 REGN power_out Gate driver supply output; requires 4.7 µF ceramic capacitor to ground.
23 PMID power_out Boost mode output (5V default) supplying external load at up to 3.1A; requires 40-60 µF to ground.
24 DSEL output Open-drain D+/D- detection control; low during detection and for MaxCharge™ adapter.
25 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WQFN-24-EP(4x4)
Category Power Management (PMIC)
Pins 25

CAD (KiCad official)

  • Symbol: BQ25895MRTWR
  • Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm
  • 3D model: WQFN-24-EP(4x4) (KiCad packages3D, STEP)
  • 3D model files: bq25895mrtwr-etched.step / bq25895mrtwr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq25895mrtwr.step / bq25895mrtwr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (66 pp, sha256 56e2dea86165cdcd, retrieved 2026-10-01, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF