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Contents

Pinout
Key specifications
Electrical characteristics
Materials and finish
CAD (KiCad official)
Provenance

README

markdown

8550T-D

Foshan Blue Rocket Elec · Bipolar Transistors - BJT · SOT-89

8550T-D from Foshan Blue Rocket Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base terminal of the PNP transistor, with emitter-base voltage limited to VEBO -6.0 V and continuous base current IB limited to -0.5 A.
2	C	passive	Collector terminal, rated for VCBO -40 V, VCEO -25 V, continuous collector current IC -1.5 A and collector power dissipation PC 625 mW.
3	E	passive	Emitter terminal of the PNP transistor, with emitter-base breakdown voltage VEBO of -6.0 V minimum.

Key specifications

Parameter	Value
Manufacturer	Foshan Blue Rocket Elec
Package	SOT-89
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector to Base Breakdown Voltage	VCBO	-40			V	IC=-0.1mA IE=0	2
Collector to Emitter Breakdown Voltage	VCEO	-25			V	IC=-2.0mA IB=0	2
Emitter to Base Breakdown Voltage	VEBO	-6			V	IE=-0.1mA IC=0	2
Collector Cut-Off Current	ICBO			-0.1	μA	VCB=-35V IE=0	2
Emitter Base Cut-Off Current	IEBO			-0.1	μA	VEB=-6.0V IC=0	2
DC Current Gain hFE(1)	hFE(1)	85		300		VCE=-1.0V IC=-100mA	2
DC Current Gain hFE(2)	hFE(2)	40				VCE=-1.0V IC=-800mA	2
DC Current Gain hFE(3)	hFE(3)	45				VCE=-1.0V IC=-5.0mA	2
DC Current Gain hFE classification D (marking HY2D)	hFE	160		300			1
Collector to Emitter Saturation Voltage	VCE(sat)		-0.28	-0.5	V	IC=-800mA IB=-80mA	2
Emitter to Base Saturation Voltage	VBE(sat)		-0.98	-1.2	V	IC=-800mA IB=-80mA	2
Emitter to Base Voltage	VBE		-0.66	-1	V	VCE=-1.0V IC=-10mA	2
Transition Frequency	fT	100	200		MHz	VCE=-10V IC=-50mA	2
Collector Output Capacitance	Cob			15	pF	VCB=-10V IE=0 f=1.0MHz	2
Collector to Base Voltage	VCBO			-40	V		2
Collector to Emitter Voltage	VCEO			-25	V		2
Emitter to Base Voltage	VEBO			-6	V		2
Collector Current - Continuous	IC			-1.5	A		2
Collector Base - Continuous	IB			-0.5	A		2
Collector Power Dissipation	PC			625	mW		2
Junction Temperature	Tj			150	℃		2
Storage Temperature Range	Tstg	-55		150	℃		2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
housing	PC		Collector Base - Continuous IB -0.5 A Collector Power Dissipation PC 625 mW	2

CAD (KiCad official)

Symbol: 8550T-D
Footprint: Package_TO_SOT_SMD:SOT-89-3
3D model: SOT-89 (KiCad packages3D, STEP)
3D model files: 8550t-d-etched.step / 8550t-d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 8550t-d.step / 8550t-d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 80bb5a7346f68090, retrieved 2026-10-29, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF