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FS13001

Public Made by Adom

by adom

FUXINSEMI Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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FS13001

FUXINSEMI · Bipolar (BJT) · TO-92-3

FS13001 from FUXINSEMI, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 7 V and emitter-base breakdown V(BR)EBO at a minimum of 7 V.
2 C passive Collector of the NPN transistor; the datasheet rates collector-base voltage VCBO at 600 V, collector-emitter voltage VCEO at 420 V, and continuous collector current IC at 0.2 A.
3 B passive Base of the NPN transistor, used for power switching; the datasheet specifies base-emitter saturation voltage VBE(sat) of 1.2 V at IC = 50 mA, IB = 10 mA.

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 600 V IC= 100μA , IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 400 V IC= 1mA , IB=0 2
Emitter-base breakdown voltage V(BR)EBO 7 V IE= 100μA, IC=0 2
Collector cut-off current ICBO 100 μA VCB= 600V , IE=0 2
Collector cut-off current ICEO 200 μA VCE= 400V, IB=0 2
Emitter cut-off current IEBO 100 μA VEB=7V, IC=0 2
DC current gain hFE(1) hFE(1) 14 VCE= 20V, IC= 20mA 2
DC current gain hFE(2) hFE(2) 5 VCE= 10V, IC= 0.25 mA 2
Collector-emitter saturation voltage VCE(sat) 0.5 V IC= 50mA, IB= 10 mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC= 50 mA, IB= 10mA 2
Transition frequency fT 8 MHz VCE= 20V, IC=20mA, f = 1MHz 2
Fall time tf 0.3 μs 2
Storage time tS 1.5 μs IC=50mA, IB1=-IB2=5mA, VCC=45V 2
Collector-base voltage VCBO 600 V Ta=25℃ 1
Collector-emitter voltage VCEO 420 V Ta=25℃ 1
Emitter-base voltage VEBO 7 V Ta=25℃ 1
Collector current, continuous IC 0.2 A Ta=25℃ 1
Collector power dissipation PC 0.75 W Ta=25℃ 1
Junction temperature TJ 150 ℃ Ta=25℃ 1
Storage temperature Tstg -55 150 ℃ Ta=25℃ 1

CAD (KiCad official)

  • Symbol: FS13001
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: fs13001-etched.step / fs13001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs13001.step / fs13001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (4 pp, sha256 41a878ebcff9f028, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF