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2SK2738-VB

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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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2SK2738-VB

VBsemi Elec · MOSFETs · TO-220F

2SK2738-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is limited to ±20 V (VGS).
2 D passive Drain terminal; continuous drain current is 70 A at TC = 25 °C with VDS of 60 V.
3 S passive Source terminal; continuous source current (diode conduction) is 50 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 70 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 50 A TC = 100 °C 1
Pulsed Drain Current IDM 200 A 1
Continuous Source Current (Diode Conduction) IS 50 A 1
Avalanche Current IAS 50 A 1
Single Avalanche Energy EAS 125 mJ L = 0.1 mH, duty cycle 1 % 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 3 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient, t ≤ 10 sec RthJA 15 18 °C/W t ≤ 10 sec 1
Maximum Junction-to-Ambient, steady state RthJA 40 50 °C/W steady state 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 60 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.01 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.016 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = 4.5 V, ID = 15 A 2
Forward Transconductance gfs 60 S VDS = 15 V, ID = 20 A 2
Input Capacitance Ciss 2650 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 470 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 225 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Total Gate Charge Qg 47 70 nC VDS = 30 V, VGS = 10 V, ID = 50 A 2
Gate-Source Charge Qgs 10 nC VDS = 30 V, VGS = 10 V, ID = 50 A 2
Gate-Drain Charge Qgd 12 nC VDS = 30 V, VGS = 10 V, ID = 50 A 2
Turn-On Delay Time td(on) 10 20 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 35 50 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 20 30 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Current ISM 70 A 2
Diode Forward Voltage VSD 1 1.5 V IF = 20 A, VGS = 0 V 2
Reverse Recovery Time trr 45 100 ns IF = 20 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: 2SK2738-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 eceeab2e9b24ba4e, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF