Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SM3400SRL-HXY

HXY MOSFET · MOSFETs · SOT-23

SM3400SRL-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated ±12 V (VGS), and the device is specified for operation with gate voltages as low as 2.5 V.
2 D passive Drain terminal; the device is rated for a drain-source voltage of 30 V and a continuous drain current of 5.8 A.
3 S passive Source terminal; the datasheet gives no pin-specific limit, and the device-level ratings are VDS 30 V, VGS ±12 V and a junction and storage temperature range of -55 to 150 ℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 33 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 0.9 1.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 41 55 mΩ VGS=2.5V, ID=4A 2
Drain-Source On-State Resistance RDS(ON) 32 42 mΩ VGS=4.5V, ID=5A 2
Drain-Source On-State Resistance RDS(ON) 28 30 mΩ VGS=10V, ID=5.8A 2
Forward Transconductance gFS 10 S VDS=5V,ID=5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=5.8A 2
Diode Forward Current IS 5.8 A 2
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID 5.8 A TA=25℃ 1
Drain Current-Pulsed IDM 30 A Note 1 1
Maximum Power Dissipation PD 1.4 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 89 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: SM3400SRL-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sm3400srl-hxy-etched.step / sm3400srl-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm3400srl-hxy.step / sm3400srl-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 bff9de8f45e0ebb9, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF