component
NP12N10G-Y-G
Public Made by Adomby adom
NATLINEAR MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNP12N10G-Y-G
NATLINEAR · MOSFETs · TO-252-2L
NP12N10G-Y-G from NATLINEAR, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) of 1 V min to 2.5 V max at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead is truncated in the package drawing); VDS max 100 V, continuous ID 12 A at TC=25°C. |
| 3 | S | passive | Source; the body diode carries continuous forward current IS up to 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 12 | A | TC=25°C | 1 | ||
| Continuous drain current | ID | 8 | A | TC=100°C | 1 | ||
| Pulsed drain current | IDP | 48 | A | 1 | |||
| Avalanche energy | EAS | 25 | mJ | L=0.5mH (note 1) | 1 | ||
| Maximum power dissipation | PD | 50 | W | TC=25°C | 1 | ||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 1 | ||
| Storage temperature | -55 | 150 | ℃ | 1 | |||
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=100V, VGS=0V, TJ=25°C | 2 | ||
| Zero gate voltage drain current | IDSS | 30 | µA | VDS=100V, VGS=0V, TJ=85°C | 2 | ||
| Gate leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 105 | 130 | mΩ | VGS=10V, ID=12A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 122 | 150 | mΩ | VGS=4.5V, ID=10A | 2 | |
| On status drain current | ID(ON) | 12 | A | VDS=100V, VGS=10V | 2 | ||
| Diode continuous forward current | IS | 12 | A | 2 | |||
| Diode forward voltage | VSD | 0.8 | 1.1 | V | ISD=12A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
NP12N10G-Y-G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
np12n10g-y-g-etched.step/np12n10g-y-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);np12n10g-y-g.step/np12n10g-y-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NATLINEAR datasheet (5 pp, sha256
0b2ad93f887864e0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).