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Contents

README

markdown

ZXMN6A11ZTA-P

TECH PUBLIC · MOSFETs · SOT-89-3

ZXMN6A11ZTA-P from TECH PUBLIC, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement MOSFET; Gate-Source voltage limit is ±20 V and threshold VGS(th) is 1 V min to 2.3 V max at ID=250 µA.
2 D passive Drain of the N-channel MOSFET; VDS max 60 V, continuous ID 3.5 A and pulsed IDM 10 A.
3 S passive Source of the N-channel MOSFET; body diode forward current IS is 3 A max with VSD of 1.2 V max at IS=3 A.

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package SOT-89-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: ZXMN6A11ZTA-P
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: zxmn6a11zta-p-etched.step / zxmn6a11zta-p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn6a11zta-p.step / zxmn6a11zta-p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (6 pp, sha256 37ee6a4d334d3081, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF