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2SK368-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SK368-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
2SK368-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of -1.0 V to -3.0 V at ID = -250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current (diode conduction) is -1.0 A steady state. |
| 3 | D | passive | Drain; drain-source voltage rated -100 V with continuous drain current of -1.5 A steady state at TA = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | -10 | µA | VDS = - 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -1.6 | A | VDS ≤ - 15 V, VGS = 10 V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 0.5 | Ω | VGS = - 10 V, ID = - 0.5 A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 0.56 | Ω | VGS = - 6.0 V, ID = - 0.5 A | 2 | ||
| Forward Transconductance | gfs | 2.2 | S | VDS = - 15 V, ID = - 0.5 A | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | -1.2 | V | IS = - 1.0 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 7.7 | 12 | nC | VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A | 2 | |
| Gate-Source Charge | Qgs | 1.5 | nC | VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A | 2 | ||
| Gate-Drain Charge | Qgd | 2.5 | nC | VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A | 2 | ||
| Gate Resistance | Rg | 9 | Ω | f = 1.0 MHz | 2 | ||
| Input Capacitance | Ciss | 520 | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 40 | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 20 | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 7 | 11 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 16 | 25 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 11 | 17 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 90 | 135 | nC | IF = 0.5 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | -100 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current, 5 s (TA = 25 °C) | ID | -1.65 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 | ||
| Continuous Drain Current, Steady State (TA = 25 °C) | ID | -1.5 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current, 5 s (TA = 70 °C) | ID | -1.55 | A | TJ = 150 °C, TA = 70 °C, 5 s | 1 | ||
| Continuous Drain Current, Steady State (TA = 70 °C) | ID | -1.4 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -3 | A | TA = 25 °C | 1 | ||
| Continuous Source Current, 5 s | IS | -1.4 | A | Diode conduction, 5 s | 1 | ||
| Continuous Source Current, Steady State | IS | -1 | A | Diode conduction, steady state | 1 | ||
| Single Pulse Avalanche Current | IAS | 4.5 | A | L = 1.0 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.01 | mJ | L = 1.0 mH | 1 | ||
| Maximum Power Dissipation, 5 s (TA = 25 °C) | PD | 2 | W | TA = 25 °C, 5 s | 1 | ||
| Maximum Power Dissipation, Steady State (TA = 25 °C) | PD | 0.85 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation, 5 s (TA = 70 °C) | PD | 1 | W | TA = 70 °C, 5 s | 1 | ||
| Maximum Power Dissipation, Steady State (TA = 70 °C) | PD | 0.58 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient, t ≤ 5 s | RthJA | 75 | 100 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 board | 1 | |
| Maximum Junction-to-Ambient, Steady State | RthJA | 120 | 166 | °C/W | Steady state, surface mounted on 1" x 1" FR4 board | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 40 | 50 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
2SK368-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
2sk368-vb-etched.step/2sk368-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk368-vb.step/2sk368-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
1dbdda9da6eed7e6, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).