component
G20P10KE-B
Public Made by Adomby adom
GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG20P10KE-B
GOFORD · MOSFETs · TO-252
G20P10KE-B from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V absolute maximum, with a threshold of -1 V min to -3 V max at ID = -250µA. |
| 2 | D | passive | Drain, connected to the exposed mounting tab; drain-source voltage is rated -100 V and continuous drain current -20 A. |
| 3 | S | passive | Source; continuous body diode current is -20 A max, and body diode forward voltage is -1.2 V max at ISD = -16A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Continuous Drain Current | ID | -20 | A | 1 | |||
| Pulsed Drain Current | IDM | -80 | A | Pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 69 | W | 1 | |||
| Single pulse avalanche energy | EAS | 56 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -100V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -10 | 10 | uA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 94 | 116 | mΩ | VGS = -10V, ID = -16A | 2 | |
| Continuous Body Diode Current | IS | -20 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -16A, VGS = 0V | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 25 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 1.8 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
G20P10KE-B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
g20p10ke-b-etched.step/g20p10ke-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g20p10ke-b.step/g20p10ke-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
7e44c3e8cfe619db, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).