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STP10NM65N-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP10NM65N-VB
VBsemi Elec · MOSFETs · TO-220AB
STP10NM65N-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±30 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 650 V and continuous drain current is 16 A at TC = 100 °C with VGS at 10 V. |
| 3 | S | passive | Source terminal; it is the reference for VGS and the body diode, with continuous source-drain diode current IS of 21 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 16 | A | TC = 100 °C, VGS at 10 V | 1 | ||
| Pulsed Drain Current | IDM | 53 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 367 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 208 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Voltage Slope | dV/dt | 37 | V/ns | TJ = 125 °C | 1 | ||
| Reverse Diode dV/dt | dV/dt | 31 | V/ns | 1 | |||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Total Gate Charge (product summary) | Qg | 106 | nC | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage (N) | VGS(th) | 2.5 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Gate-Source Leakage | IGSS | -1 | 1 | μA | VGS = ± 30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 650 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Continuous Source-Drain Diode Current | IS | 21 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 53 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 | |
| VDS Temperature Coefficient | VDS/TJ | -0.67 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Forward Transconductance | gfs | 7 | S | VDS = 30 V, ID = 11 A | 2 | ||
| Input Capacitance | Ciss | 4826 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 456 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Effective Output Capacitance, Energy Related | Co(er) | 84 | pF | VDS = 0 V to 520 V, VGS = 0 V | 2 | ||
| Effective Output Capacitance, Time Related | Co(tr) | 293 | pF | VDS = 0 V to 520 V, VGS = 0 V | 2 | ||
| Total Gate Charge | Qg | 71 | nC | VGS = 10 V, ID = 11 A, VDS = 520 V | 2 | ||
| Gate-Source Charge | Qgs | 14 | nC | VGS = 10 V, ID = 11 A, VDS = 520 V | 2 | ||
| Gate-Drain Charge | Qgd | 33 | nC | VGS = 10 V, ID = 11 A, VDS = 520 V | 2 | ||
| Turn-On Delay Time | td(on) | 22 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | ||
| Rise Time | tr | 34 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | ||
| Turn-Off Delay Time | td(off) | 68 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | ||
| Fall Time | tf | 42 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | ||
| Gate Input Resistance | Rg | 0.78 | Ω | f = 1 MHz, open drain | 2 | ||
| Reverse Recovery Time | trr | 160 | ns | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 | ||
| Reverse Recovery Charge | Qrr | 1.2 | μC | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 | ||
| Reverse Recovery Current | IRRM | 14 | A | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
CAD (KiCad official)
- Symbol:
STP10NM65N-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
stp10nm65n-vb-etched.step/stp10nm65n-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp10nm65n-vb.step/stp10nm65n-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
50c19a07457b0a98, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).