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Contents

README

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TPA3139D2RGER

Texas Instruments · Audio Power OpAmps · VQFN-24-EP(4x4)

TPA3139D2RGER from Texas Instruments, in a VQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUTPL output Class-D H-bridge positive output for left channel.
2 BSPL passive Bootstrap supply (BST) for positive high-side FET of the left channel.
3 PVCCL power_in Power supply for left channel H-bridge; right and left channel power supply inputs are connected internally.
4 SD/FAULT bidirectional TTL-level shutdown input with compliance to AVCC (LOW = outputs Hi-Z, HIGH = outputs enabled) that also reports faults (Over-Temp, Over-Current, DC Detect) by going Low, with auto-recovery once the fault is removed.
5 LINP input Positive audio input for left channel, biased at 2.5 V; connect to GND for PBTL mode.
6 LINN input Negative audio input for left channel, biased at 2.5 V; connect to GND for PBTL mode.
7 GAIN_SEL input Gain select input with TTL levels: Low = 20-dB gain, High = 26-dB gain, Floating = 26-dB gain.
8 MODE_SEL input Mode select input with TTL levels: Low = BD mode with UV threshold 7.5 V, High or Floating = 1SPW mode with UV threshold 3.4 V.
9 AVCC power_in Analog supply.
10 AGND power_in Analog signal ground.
11 GVDD power_out FET gate drive supply with nominal voltage of 5 V.
12 PLIMIT input Power limiter level control: connect a resistor divider from GVDD to GND to set the power limit, or connect directly to GVDD for no power limit.
13 RINN input Negative audio input for right channel, biased at 2.5 V.
14 RINP input Positive audio input for right channel, biased at 2.5 V.
15 MUTE input Mute signal for fast disable/enable of outputs (HIGH = outputs Hi-Z, LOW = outputs enabled), TTL logic levels with compliance to AVCC.
16 PVCCR power_in Power supply for right channel H-bridge; right and left channel power supply inputs are connected internally.
17 BSPR passive Bootstrap supply (BST) for positive high-side FET of the right channel.
18 OUTPR output Class-D H-bridge positive output for right channel.
19 PGND power_in Power ground for the H-bridges.
20 OUTNR output Class-D H-bridge negative output for right channel.
21 BSNR passive Bootstrap supply (BST) for negative high-side FET of the right channel.
22 BSNL passive Bootstrap supply (BST) for negative high-side FET of the left channel.
23 OUTNL output Class-D H-bridge negative output for left channel.
24 PGND power_in Power ground for the H-bridges.
25 Thermal Pad power_in Thermal pad; connect to GND for best thermal and electrical performance.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VQFN-24-EP(4x4)
Category Operational Amplifier/Comparator
Pins 25

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC 3.5 14.4 V PVCC, AVCC 6
High-level input voltage VIH 2 V SD/FAULT, MUTE, GAIN_SEL, MODE_SEL (max AVCC) 6
Low-level input voltage VIL 0.8 V SD/FAULT, MUTE, GAIN_SEL, MODE_SEL 6
Low-level output voltage VOL 0.8 V SD/FAULT, RPULL-UP =100 kΩ, PVCC = 14.4 V 6
High-level input current IIH 50 µA SD/FAULT, MUTE, GAIN_SEL, MODE_SEL, VI = 2 V, AVCC = 12 V 6
Low-level input current IIL 5 µA SD/FAULT, MUTE, GAIN_SEL, MODE_SEL, VI = 0.8 V, AVCC = 12 V 6
Operating free-air temperature TA -10 85 °C 6
Operating junction temperature TJ -10 150 °C 6
Supply voltage AVCC, PVCC -0.3 20 V AVCC to GND, PVCC to GND 5
Input current 10 mA To any pin except supply pins 5
Slew rate, maximum 10 V/ms SD/FAULT to GND, GAIN_SEL, MODE_SEL, MUTE 5
Interface pin voltage -0.3 V SD/FAULT, GAIN_SEL, MODE_SEL, MUTE (max AVCC + 0.3 V) 5
Interface pin voltage PLIMIT -0.3 V PLIMIT (max GVDD + 0.3 V) 5
Interface pin voltage inputs -0.3 5.5 V RINN, RINP, LINN, LINP 5
Minimum load resistance RL 4.8 Ω BTL, 10 V ≤ PVCC ≤ 14.4 V 5
Minimum load resistance RL 3.2 Ω BTL, 3.5 V < PVCC < 10 V 5
Minimum load resistance RL 2.4 Ω PBTL, 10 V ≤ PVCC < 14.4 V 5
Minimum load resistance RL 1.6 Ω PBTL, 3.5 V ≤ PVCC < 10 V 5
Operating junction temperature range TJ -25 150 °C 5
Storage temperature range Tstg -40 125 °C 5
ESD HBM V(ESD) -1000 1000 V Human body model, ANSI/ESDA/JEDEC JS-001 5
ESD CDM V(ESD) -250 250 V Charged device model, JESD22-C101 5
Gain G 19 20 21 dB GAIN_SEL= 0.8 V 7
Gain G 25 26 27 dB GAIN_SEL= 2 V 7
Gate drive supply GVDD 4.8 5 5.2 V IGVDD = 2 mA 7
Oscillator frequency, Spread Spectrum ON fOSC, SS 305 340 kHz over operating free-air temperature range 8
Output offset voltage /VOS/ 1.5 mV VI = 0 V 7
Quiescent supply current ICC 20 mA SD/FAULT = 2 V, ferrite bead filter, 1SPW Mode, PVCC = 12 V 7
Quiescent supply current ICC 37 mA SD/FAULT = 2 V, ferrite bead filter, BD Mode, PVCC = 12 V 7
Quiescent supply current in shutdown ICC(SD) 10 µA SD/FAULT = 0.8 V, no load 7
Drain-source on-state resistance high side rDS(on) 180 mΩ IO = 500 mA, TJ = 25°C, excluding metal and bond wire resistance 7
Drain-source on-state resistance low side rDS(on) 180 mΩ IO = 500 mA, TJ = 25°C, excluding metal and bond wire resistance 7
Maximum output current IO 3.5 A f = 1 kHz, RL = 3 Ω 7
Output power (BTL), 1% THD+N PO 3 W PVCC = 7.4 V, RL = 8 Ω, f = 1 kHz, 1SPW mode 7
Output power (BTL), 10% THD+N PO 14.3 W PVCC = 12 V, RL = 4 Ω, f = 1 kHz, BD mode 7
Total harmonic distortion + noise THD+N 0.04 % f = 1 kHz, PO = 5 W (half-power) 7
Power supply ripple rejection PSRR -85 dB 200-mVPP ripple at 1 kHz, inputs ac-coupled to GND 7
Signal-to-noise ratio SNR 102 dB Maximum output at THD+N < 1%, f = 1 kHz, A-weighted 7
Thermal trip point OTE 150 °C 7
Thermal hysteresis 15 °C 7
Turn-on time tON 15 ms SD/FAULT = 2 V 7
Turn-off time tOFF 2.9 µs SD/FAULT = 0.8 V 7
DC detect time tDCDET 800 ms VRINP = 2.6 V and VRINN = 2.4 V, or VRINP = 2.4 V and VRINN = 2.6 V 7
Over Voltage Protection OVP 15.8 V 7
Under Voltage Protection UVP 7.5 V MODE_SEL = 0.8 V (BD mode) 7
Under Voltage Protection UVP 3.4 V MODE_SEL = 2 V, or floating (1SPW mode) 7
Junction-to-ambient thermal resistance RθJA 37.4 °C/W RGE (QFN) 24 pins 6
Junction-to-case (top) thermal resistance RθJC(top) 35.1 °C/W RGE (QFN) 24 pins 6
Junction-to-board thermal resistance RθJB 16.8 °C/W RGE (QFN) 24 pins 6
Junction-to-top characterization parameter ψJT 0.9 °C/W RGE (QFN) 24 pins 6
Junction-to-board characterization parameter ψJB 16.7 °C/W RGE (QFN) 24 pins 6
Junction-to-case (bottom) thermal resistance RθJC(bot) 7.3 °C/W RGE (QFN) 24 pins 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper the power supply leads. For higher frequency transients due to parasitic circuit elements such as bond wire and copper trace inductances as well as lead frame capacitance, a good quality low equivalen 29

CAD (KiCad official)

  • Symbol: TPA3139D2RGER
  • Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm
  • 3D model: VQFN-24-EP(4x4) (KiCad packages3D, STEP)
  • 3D model files: tpa3139d2rger-etched.step / tpa3139d2rger-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpa3139d2rger.step / tpa3139d2rger.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (41 pp, sha256 38b48dcd30690fe8, retrieved 2026-10-31, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF