component
F7N70L
Public Made by Adomby adom
Shandong Jingdao Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownF7N70L
Shandong Jingdao Microelectronics · MOSFETs · TO-220F-3
F7N70L from Shandong Jingdao Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; VGSS rating is ±30 V and the gate threshold voltage is 2.0 V min to 4.0 V max at VDS=VGS, ID=250uA. |
| 2 | Drain | passive | Drain terminal; VDSS is 700 V, continuous drain current is 7 A at Tc=25°C and 4.5 A at Tc=100°C, and pulsed drain current is 28 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with the body diode between source and drain rated for 7 A continuous (IS) and 28 A pulsed (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 700 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 7 | A | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 4.5 | A | Tc=100℃ | 1 | ||
| Pulsed Drain Current (Note 2) | IDM | 28 | A | 1 | |||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 281.3 | mJ | 1 | |||
| Power Dissipation | PD | 32 | W | 1 | |||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 50 | V/ns | 1 | |||
| Operation Junction Temperature and Storage Temperature | Tj,Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, Junction to Ambient | RthJA | 63 | °C/W | 1 | |||
| Thermal resistance, Junction to Case | RthJC | 2.99 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BV DSS | 700 | V | VDS=0V,ID=250uA | 2 | ||
| Gate-Source Leakage Current, Forward | IGSS | 100 | nA | VGS=30V,VDS=0V | 2 | ||
| Gate-Source Leakage Current, Reverse | IGSS | -100 | nA | VGS=-30V,VDS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=700V,VGS=0V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 1.3 | Ω | VGS=10V,ID=3.5A | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | V | VDS=VGS,ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 4 | V | VDS=VGS,ID=250uA | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 7 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | 2 |
CAD (KiCad official)
- Symbol:
F7N70L - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (8 pp, sha256
f14428b6edc9919e, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).