component
STGB30M65DF2
Public Made by Adomby adom
STMicroelectronics IGBT Transistors / Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTGB30M65DF2
STMicroelectronics · IGBT Transistors / Modules · D2PAK
STGB30M65DF2 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT, with maximum gate-emitter voltage of ±20 V and threshold VGE(th) of 5 to 7 V at IC = 500 µA. |
| 2 | C | passive | Collector of the IGBT (also connected to the TAB), rated for VCES of 650 V and continuous IC of 30 A at TC = 100 °C. |
| 3 | E | passive | Emitter of the IGBT, which is also the anode of the antiparallel diode, with continuous forward current of 30 A at TC = 100 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STGB30M65DF2 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
stgb30m65df2-etched.step/stgb30m65df2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgb30m65df2.step/stgb30m65df2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (18 pp, sha256
096f5bed06f0293a, retrieved 2026-10-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).