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Contents

README

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BTA41-1200BW

KTP · TRIACs · TO-3P

BTA41-1200BW from KTP, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 of the triac, which carries the on-state current up to IT(RMS) 40 A (TC≤81℃).
2 T2 passive Main terminal 2 of the triac, with repetitive peak off-state and reverse voltage VDRM/VRRM of 1200 V.
3 G input Gate trigger input, with IGT max 50 mA and VGT max 1.3 V in quadrants I-II-III (VD=12V, RL=33Ω) and peak gate current IGM 8 A.

Key specifications

Parameter Value
Manufacturer KTP
Package TO-3P
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage VDRM 1200 V Tj=25℃ 1
Repetitive peak reverse voltage VRRM 1200 V Tj=25℃ 1
RMS on-state current IT(RMS) 40 A TC≤81℃ 1
Non repetitive surge peak on-state current ITSM 420 A full cycle, tp=20ms, Tj=25℃ 1
Non repetitive surge peak on-state current ITSM 462 A full cycle, tp=16.6ms, Tj=25℃ 1
I2t value for fusing I2t 1000 A2s tp=10ms, Tj=25℃ 1
Critical rate of rise of on-state current dI/dt 100 A/μs IG=2×IGT, f=100Hz, Tj=125℃ 1
Peak gate current IGM 8 A tp=20μs, Tj=125℃ 1
Average gate power dissipation PG(AV) 0.5 W Tj=125℃ 2
Peak gate power PGM 40 W 2
Peak pulse voltage Vpp 2 kV Tj=25℃; non-repetitive, off-state; FIG.7 2
Gate trigger current IGT 50 mA VD=12V RL=33Ω; Quadrant Ⅰ-Ⅱ-Ⅲ 2
Gate trigger voltage VGT 1.3 V Quadrant Ⅰ-Ⅱ-Ⅲ 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM Tj=125℃ RL=3.3KΩ; Quadrant Ⅰ-Ⅱ-Ⅲ 2
Latching current IL 80 mA IG=1.2IGT; Quadrant Ⅰ-Ⅲ 2
Latching current IL 200 mA IG=1.2IGT; Quadrant Ⅱ 2
Holding current IH 100 mA IT=500mA 2
Critical rate of rise of off-state voltage dV/dt 1500 V/μs VD=800V Gate Open Tj=125℃ 2
Critical rate of rise of commutating voltage (dI/dt)c 25 A/ms (dV/dt)c=20V/μs Tj=125℃ 2
Threshold voltage VTO 0.77 V Tj=125℃ 2
On-state voltage VTM 1.4 V ITM=60A tp=380μs Tj=25℃ 2
Dynamic resistance RD 20 mΩ Tj=125℃ 2
Repetitive peak off-state current IDRM 10 μA VD=VDRM VR=VRRM Tj=25℃ 2
Repetitive peak reverse current IRRM 6 mA Tj=125℃ 2
Junction to case thermal resistance (AC) Rth(j-c) 0.85 ℃/W 2
Junction to ambient thermal resistance (AC) Rth(j-a) 50 ℃/W 2
Turn-on time ton 10 μs IG=80mA IA=400mA IR=40mA Tj=25℃ 2
Turn-off time toff 70 μs 2

CAD (KiCad official)

  • Symbol: BTA41-1200BW
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: bta41-1200bw-etched.step / bta41-1200bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta41-1200bw.step / bta41-1200bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KTP datasheet (5 pp, sha256 7b5a76da5b45890e, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF