component
3DD13002B
Public Made by Adomby adom
Changjiang Electronics Tech (CJ) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown3DD13002B
Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · TO-92
3DD13002B from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives no separate electrical limit for this pin beyond the device maximum ratings (VEBO 6 V, IC 0.8 A continuous). |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates collector-emitter voltage at 400 V and collector-base voltage at 600 V, with 0.8 A continuous collector current. |
| 3 | BASE | input | Base terminal of the NPN transistor that controls the switching; the datasheet gives VBE(sat) of 1.1 V at IC=200mA, IB=40mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 600 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 400 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current -Continuous | IC | 0.8 | A | 1 | |||
| Collector Power Dissipation | PC | 0.9 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | 600 | V | IC=100μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 400 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE= 100μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 100 | µA | VCB= 600V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | µA | VEB= 6 V, IC=0 | 1 | ||
| DC current gain | hFE1 | 9 | 40 | VCE= 10 V, IC=200mA | 1 | ||
| DC current gain | hFE2 | 5 | VCE= 10 V, IC=0.25mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=200mA, IB=40mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.1 | V | IC=200mA, IB=40mA | 1 | ||
| Transition frequency | fT | 5 | MHz | VCE=10V, IC=100mA, f =1MHz | 1 | ||
| Fall time | tf | 0.5 | µs | 1 | |||
| Storage time | ts | 2.5 | µs | IC=1A, IB1=-IB2=0.2A, VCC=100V | 1 |
CAD (KiCad official)
- Symbol:
3DD13002B - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
3dd13002b-etched.step/3dd13002b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);3dd13002b.step/3dd13002b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (2 pp, sha256
dc7882da82c7d542, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).