component
IRF7380TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7380TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF7380TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the reference for the gate drive, with VGS rated at ±20 V maximum. |
| 2 | G1 | input | Gate of MOSFET 1; VGS is rated at ±20 V maximum and VGS(th) is 2.0 V minimum to 4.0 V maximum. |
| 3 | S2 | passive | Source terminal of MOSFET 2; the reference for the gate drive, with VGS rated at ±20 V maximum. |
| 4 | G2 | input | Gate of MOSFET 2; VGS is rated at ±20 V maximum and VGS(th) is 2.0 V minimum to 4.0 V maximum. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second lead of the same drain node); the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C. |
| 7 | D1 | passive | Drain terminal of MOSFET 1; the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C. |
| 8 | D1 | passive | Drain terminal of MOSFET 1 (second lead of the same drain node); the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 80 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 61 | 73 | mΩ | VGS = 10V, ID = 2.2A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 80V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 64V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 200 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -200 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 4.3 | S | VDS = 25V, ID = 2.2A | 2 | ||
| Total Gate Charge | Qg | 15 | 23 | nC | ID = 2.2A, VDS = 40V, VGS = 10V | 2 | |
| Single Pulse Avalanche Energy | EAS | 75 | mJ | Starting TJ = 25°C, L = 31mH, RG = 25Ω, IAS = 2.2A | 2 | ||
| Avalanche Current | IAR | 2.2 | A | 2 | |||
| Continuous Source Current (Body Diode) | IS | 3.6 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 29 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 2.2A, VGS = 0V | 2 | ||
| Drain-to-Source Voltage | VDS | 80 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3.6 | A | TA = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 2.9 | A | TA = 100°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 29 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.3 | W | TA = 25°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Peak Diode Recovery dv/dt | dv/dt | 2 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Drain Lead Thermal Resistance | RθJL | 42 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | PCB mount, 1 inch square copper board | 1 |
CAD (KiCad official)
- Symbol:
IRF7380TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7380trpbf-etched.step/irf7380trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7380trpbf.step/irf7380trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
e720b802f44710d3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).