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HSU6901
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSU6901
HUASHUO · MOSFETs · TO-252-4
HSU6901 from HUASHUO, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60V, 23A, 32mΩ max RDS(ON) at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, VGS rated ±20V with 1.2V to 2.5V threshold. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60V, -18A, 70mΩ max RDS(ON) at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, VGS rated ±20V with -1.2V to -2.5V threshold. |
| 5 | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, tied together internally. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 60 | V | 1 | |||
| P-ch Drain-Source Voltage | VDS | -60 | V | 1 | |||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-ch Continuous Drain Current | ID@TC=25℃ | 23 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID@TC=25℃ | -18 | A | VGS @ 10V | 1 | ||
| N-ch Continuous Drain Current | ID@TC=100℃ | 15 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID@TC=100℃ | -11 | A | VGS @ 10V | 1 | ||
| N-ch Continuous Drain Current | ID@TA=25℃ | 5.6 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID@TA=25℃ | -4.3 | A | VGS @ 10V | 1 | ||
| N-ch Continuous Drain Current | ID@TA=70℃ | 4.5 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID@TA=70℃ | -3.5 | A | VGS @ 10V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 46 | A | 1 | |||
| P-ch Pulsed Drain Current | IDM | -36 | A | 1 | |||
| N-ch Single Pulse Avalanche Energy | EAS | 34.5 | mJ | 1 | |||
| P-ch Single Pulse Avalanche Energy | EAS | 51.2 | mJ | 1 | |||
| N-ch Avalanche Current | IAS | 22.6 | A | 1 | |||
| P-ch Avalanche Current | IAS | -26.6 | A | 1 | |||
| N-ch Total Power Dissipation | PD@TC=25℃ | 34.7 | W | 1 | |||
| P-ch Total Power Dissipation | PD@TC=25℃ | 34.7 | W | 1 | |||
| N-ch Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| P-ch Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range (N-ch and P-ch) | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (N-ch and P-ch) | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 32 | mΩ | VGS=10V, ID=15A | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 38 | mΩ | VGS=4.5V, ID=10A | 2 | ||
| N-ch Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| N-ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-ch Continuous Source Current | IS | 23 | A | VG=VD=0V, Force Current | 2 | ||
| N-ch Pulsed Source Current | ISM | 46 | A | 2 | |||
| N-ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 70 | mΩ | VGS=-10V, ID=-12A | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 105 | mΩ | VGS=-4.5V, ID=-8A | 3 | ||
| P-ch Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 | ||
| P-ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-ch Continuous Source Current | IS | -18 | A | VG=VD=0V, Force Current | 3 | ||
| P-ch Pulsed Source Current | ISM | -36 | A | 3 | |||
| P-ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
HSU6901 - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
hsu6901-etched.step/hsu6901-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu6901.step/hsu6901.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (9 pp, sha256
8f46295701f4b3b9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).