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Contents

README

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NCE9435

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE9435 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied to pins 2 and 3.
2 S passive Source of the P-channel MOSFET, tied to pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to pins 1 and 2.
4 G input Gate of the P-channel MOSFET, with VGS limit of ±20V and threshold of -1.1V to -2.1V.
5 D passive Drain of the P-channel MOSFET, VDS up to -30V and ID -5.1A continuous, tied to pins 6, 7 and 8.
6 D passive Drain of the P-channel MOSFET, VDS up to -30V and ID -5.1A continuous, tied to pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, VDS up to -30V and ID -5.1A continuous, tied to pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, VDS up to -30V and ID -5.1A continuous, tied to pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.1 -1.6 -2.1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 43 55 mΩ VGS=-10V, ID=-5.1A 2
Drain-Source On-State Resistance RDS(ON) 62 90 mΩ VGS=-4.5V, ID=-4.2A 2
Forward Transconductance gFS 4 7 S VDS=-15V,ID=-5.1A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-5.1A 2
Drain-Source Voltage VDS -30 V TA=25℃ (absolute maximum ratings header) 1
Gate-Source Voltage VGS -20 20 V TA=25℃ (absolute maximum ratings header) 1
Drain Current-Continuous ID -5.1 A TA=25℃ (absolute maximum ratings header) 1
Drain Current-Pulsed IDM -20 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 2.5 W TA=25℃ (absolute maximum ratings header) 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 1

CAD (KiCad official)

  • Symbol: NCE9435
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce9435-etched.step / nce9435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce9435.step / nce9435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 e4640b8ca0955f6f, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF